Abstract
It is necessary to protect the surface of AlAs-based heterostructures from oxidation using a GaAs cap layer because of the high reactivity of aluminum. Thus, the surface region of these heterostructures always contains a GaAs/AlAs heterojunction. Here, it is demonstrated that, under nonresonant photoexcitation, the photoluminescence spectrum of AlAs-based heterostructures features a band associated with this heterojunction. The intensity of this band is determined by the thickness and doping type of the GaAs cap layer.
Original language | English |
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Pages (from-to) | 1513-1516 |
Number of pages | 4 |
Journal | Semiconductors |
Volume | 51 |
Issue number | 11 |
DOIs | |
Publication status | Published - 1 Nov 2017 |