Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures

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Abstract

It is necessary to protect the surface of AlAs-based heterostructures from oxidation using a GaAs cap layer because of the high reactivity of aluminum. Thus, the surface region of these heterostructures always contains a GaAs/AlAs heterojunction. Here, it is demonstrated that, under nonresonant photoexcitation, the photoluminescence spectrum of AlAs-based heterostructures features a band associated with this heterojunction. The intensity of this band is determined by the thickness and doping type of the GaAs cap layer.

Original languageEnglish
Pages (from-to)1513-1516
Number of pages4
JournalSemiconductors
Volume51
Issue number11
DOIs
Publication statusPublished - 1 Nov 2017

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