Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures

V. E. Nikiforov; D. S. Abramkin; T. S. Shamirzaev

doi:10.1134/S1063782617110203

Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures

V. E. Nikiforov, D. S. Abramkin, T. S. Shamirzaev

Research output: Contribution to journal › Article › peer-review

Abstract

It is necessary to protect the surface of AlAs-based heterostructures from oxidation using a GaAs cap layer because of the high reactivity of aluminum. Thus, the surface region of these heterostructures always contains a GaAs/AlAs heterojunction. Here, it is demonstrated that, under nonresonant photoexcitation, the photoluminescence spectrum of AlAs-based heterostructures features a band associated with this heterojunction. The intensity of this band is determined by the thickness and doping type of the GaAs cap layer.

Original language	English
Pages (from-to)	1513-1516
Number of pages	4
Journal	Semiconductors
Volume	51
Issue number	11
DOIs	https://doi.org/10.1134/S1063782617110203
Publication status	Published - 1 Nov 2017

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abstract = "It is necessary to protect the surface of AlAs-based heterostructures from oxidation using a GaAs cap layer because of the high reactivity of aluminum. Thus, the surface region of these heterostructures always contains a GaAs/AlAs heterojunction. Here, it is demonstrated that, under nonresonant photoexcitation, the photoluminescence spectrum of AlAs-based heterostructures features a band associated with this heterojunction. The intensity of this band is determined by the thickness and doping type of the GaAs cap layer.",

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N2 - It is necessary to protect the surface of AlAs-based heterostructures from oxidation using a GaAs cap layer because of the high reactivity of aluminum. Thus, the surface region of these heterostructures always contains a GaAs/AlAs heterojunction. Here, it is demonstrated that, under nonresonant photoexcitation, the photoluminescence spectrum of AlAs-based heterostructures features a band associated with this heterojunction. The intensity of this band is determined by the thickness and doping type of the GaAs cap layer.

AB - It is necessary to protect the surface of AlAs-based heterostructures from oxidation using a GaAs cap layer because of the high reactivity of aluminum. Thus, the surface region of these heterostructures always contains a GaAs/AlAs heterojunction. Here, it is demonstrated that, under nonresonant photoexcitation, the photoluminescence spectrum of AlAs-based heterostructures features a band associated with this heterojunction. The intensity of this band is determined by the thickness and doping type of the GaAs cap layer.

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Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures

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