Abstract
Localized states of a large-radius exciton on a planar short-range defect, which is simulated by the potential −Vδ(z), are studied theoretically. The ratio of the amplitude V to e2/ε (ε is the dielectric constant) determines two asymptotic regimes of weak and strong localization. In both cases, the radiation lifetime of the exciton increases with V according to power laws V1/4 and V in the cases of weak and strong localization, respectively.
Original language | English |
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Pages (from-to) | 230-233 |
Number of pages | 4 |
Journal | JETP Letters |
Volume | 112 |
Issue number | 4 |
DOIs | |
Publication status | Published - 1 Aug 2020 |
Keywords
- STATE
- WELL