Localization of Excitons on Planar Defects in Semiconductor Crystals

M. M. Mahmoodian; A. V. Chaplik

doi:10.1134/S0021364020160080

Localization of Excitons on Planar Defects in Semiconductor Crystals

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Abstract

Localized states of a large-radius exciton on a planar short-range defect, which is simulated by the potential −Vδ(z), are studied theoretically. The ratio of the amplitude V to e²/ε (ε is the dielectric constant) determines two asymptotic regimes of weak and strong localization. In both cases, the radiation lifetime of the exciton increases with V according to power laws V^1/4 and V in the cases of weak and strong localization, respectively.

Original language	English
Pages (from-to)	230-233
Number of pages	4
Journal	JETP Letters
Volume	112
Issue number	4
DOIs	https://doi.org/10.1134/S0021364020160080
Publication status	Published - 1 Aug 2020

Keywords

STATE
WELL

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10.1134/S0021364020160080

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abstract = "Localized states of a large-radius exciton on a planar short-range defect, which is simulated by the potential −Vδ(z), are studied theoretically. The ratio of the amplitude V to e2/ε (ε is the dielectric constant) determines two asymptotic regimes of weak and strong localization. In both cases, the radiation lifetime of the exciton increases with V according to power laws V1/4 and V in the cases of weak and strong localization, respectively.",

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N2 - Localized states of a large-radius exciton on a planar short-range defect, which is simulated by the potential −Vδ(z), are studied theoretically. The ratio of the amplitude V to e2/ε (ε is the dielectric constant) determines two asymptotic regimes of weak and strong localization. In both cases, the radiation lifetime of the exciton increases with V according to power laws V1/4 and V in the cases of weak and strong localization, respectively.

AB - Localized states of a large-radius exciton on a planar short-range defect, which is simulated by the potential −Vδ(z), are studied theoretically. The ratio of the amplitude V to e2/ε (ε is the dielectric constant) determines two asymptotic regimes of weak and strong localization. In both cases, the radiation lifetime of the exciton increases with V according to power laws V1/4 and V in the cases of weak and strong localization, respectively.

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