Localization of Excitons on Planar Defects in Semiconductor Crystals

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1 Citation (Scopus)


Localized states of a large-radius exciton on a planar short-range defect, which is simulated by the potential −Vδ(z), are studied theoretically. The ratio of the amplitude V to e2/ε (ε is the dielectric constant) determines two asymptotic regimes of weak and strong localization. In both cases, the radiation lifetime of the exciton increases with V according to power laws V1/4 and V in the cases of weak and strong localization, respectively.

Original languageEnglish
Pages (from-to)230-233
Number of pages4
JournalJETP Letters
Issue number4
Publication statusPublished - 1 Aug 2020


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