Local monitoring of atomic steps on GaAs(001) surface under oxidation, wet removal of oxides and thermal smoothing

I. O. Akhundov; D. M. Kazantsev; V. L. Alperovich; D. V. Sheglov; A. S. Kozhukhov; A. V. Latyshev

doi:10.1016/j.apsusc.2017.02.062

Local monitoring of atomic steps on GaAs(001) surface under oxidation, wet removal of oxides and thermal smoothing

I. O. Akhundov, D. M. Kazantsev, V. L. Alperovich, D. V. Sheglov, A. S. Kozhukhov, A. V. Latyshev

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The GaAs(001) step-terraced surface relief is studied under oxidation, wet oxide removal and thermal smoothing by ex situ atomic force microscopy with local monitoring of specific atomic steps using lithographic marks for surface area localization. Oxidation in the air and wet oxide removal lead to the formation of monatomic dips on terraces, while atomic steps keep their position and shape. Monitoring step mean position under thermal smoothing allows us to determine the deviation from equilibrium. The experimental smoothing kinetics is well described by Monte Carlo simulation. (C) 2017 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	307-311
Number of pages	5
Journal	Applied Surface Science
Volume	406
DOIs	https://doi.org/10.1016/j.apsusc.2017.02.062
Publication status	Published - 1 Jun 2017

Keywords

Atomic steps
GaAs
Local oxidation
Monte Carlo simulation
Surface smoothing
SILICON
NANOSTRUCTURES
SI(111)
MICROSCOPY
GAAS
GROWTH
MONTE-CARLO-SIMULATION
NUCLEATION
EQUILIBRIUM CONDITIONS

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10.1016/j.apsusc.2017.02.062

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title = "Local monitoring of atomic steps on GaAs(001) surface under oxidation, wet removal of oxides and thermal smoothing",

abstract = "The GaAs(001) step-terraced surface relief is studied under oxidation, wet oxide removal and thermal smoothing by ex situ atomic force microscopy with local monitoring of specific atomic steps using lithographic marks for surface area localization. Oxidation in the air and wet oxide removal lead to the formation of monatomic dips on terraces, while atomic steps keep their position and shape. Monitoring step mean position under thermal smoothing allows us to determine the deviation from equilibrium. The experimental smoothing kinetics is well described by Monte Carlo simulation. (C) 2017 Elsevier B.V. All rights reserved.",

keywords = "Atomic steps, GaAs, Local oxidation, Monte Carlo simulation, Surface smoothing, SILICON, NANOSTRUCTURES, SI(111), MICROSCOPY, GAAS, GROWTH, MONTE-CARLO-SIMULATION, NUCLEATION, EQUILIBRIUM CONDITIONS",

author = "Akhundov, {I. O.} and Kazantsev, {D. M.} and Alperovich, {V. L.} and Sheglov, {D. V.} and Kozhukhov, {A. S.} and Latyshev, {A. V.}",

year = "2017",

month = jun,

day = "1",

doi = "10.1016/j.apsusc.2017.02.062",

language = "English",

volume = "406",

pages = "307--311",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

TY - JOUR

T1 - Local monitoring of atomic steps on GaAs(001) surface under oxidation, wet removal of oxides and thermal smoothing

AU - Akhundov, I. O.

AU - Kazantsev, D. M.

AU - Alperovich, V. L.

AU - Sheglov, D. V.

AU - Kozhukhov, A. S.

AU - Latyshev, A. V.

PY - 2017/6/1

Y1 - 2017/6/1

N2 - The GaAs(001) step-terraced surface relief is studied under oxidation, wet oxide removal and thermal smoothing by ex situ atomic force microscopy with local monitoring of specific atomic steps using lithographic marks for surface area localization. Oxidation in the air and wet oxide removal lead to the formation of monatomic dips on terraces, while atomic steps keep their position and shape. Monitoring step mean position under thermal smoothing allows us to determine the deviation from equilibrium. The experimental smoothing kinetics is well described by Monte Carlo simulation. (C) 2017 Elsevier B.V. All rights reserved.

AB - The GaAs(001) step-terraced surface relief is studied under oxidation, wet oxide removal and thermal smoothing by ex situ atomic force microscopy with local monitoring of specific atomic steps using lithographic marks for surface area localization. Oxidation in the air and wet oxide removal lead to the formation of monatomic dips on terraces, while atomic steps keep their position and shape. Monitoring step mean position under thermal smoothing allows us to determine the deviation from equilibrium. The experimental smoothing kinetics is well described by Monte Carlo simulation. (C) 2017 Elsevier B.V. All rights reserved.

KW - Atomic steps

KW - GaAs

KW - Local oxidation

KW - Monte Carlo simulation

KW - Surface smoothing

KW - SILICON

KW - NANOSTRUCTURES

KW - SI(111)

KW - MICROSCOPY

KW - GAAS

KW - GROWTH

KW - MONTE-CARLO-SIMULATION

KW - NUCLEATION

KW - EQUILIBRIUM CONDITIONS

UR - http://www.scopus.com/inward/record.url?scp=85014058040&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2017.02.062

DO - 10.1016/j.apsusc.2017.02.062

M3 - Article

AN - SCOPUS:85014058040

VL - 406

SP - 307

EP - 311

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -

Local monitoring of atomic steps on GaAs(001) surface under oxidation, wet removal of oxides and thermal smoothing

Abstract

Keywords

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