Level-crossing induced spin phenomena in SiC: A theoretical study

Denis V. Sosnovsky; Konstantin L. Ivanov

doi:10.1103/PhysRevB.103.014403

Level-crossing induced spin phenomena in SiC: A theoretical study

Denis V. Sosnovsky, Konstantin L. Ivanov

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Abstract

A theoretical approach is proposed to describe the spin dynamics in defect color centers. The method explicitly considers the spin dynamics in the ground state and excited state of the defect center as well as spin state dependent transitions involving the ground state, excited state, and an additional intermediate state. The proposed theory is applied to treat spin-dependent phenomena in silicon carbide, namely, in spin-32 silicon-vacancy centers, termed VSi or V2 centers. Theoretical predictions of magnetic field dependent photoluminescence intensity and optically detected magnetic resonance spectra demonstrate an important role of level-crossing phenomena in the spin dynamics of the ground state and excited state. The results are in good agreement with previously published experimental data [Phys. Rev. X 6, 031014 (2016)10.1103/PhysRevX.6.031014].

Original language	English
Article number	014403
Number of pages	8
Journal	Physical Review B
Volume	103
Issue number	1
DOIs	https://doi.org/10.1103/PhysRevB.103.014403
Publication status	Published - 5 Jan 2021

Keywords

SINGLE-SPIN
DIAMOND
VACANCY
DYNAMICS

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10.1103/PhysRevB.103.014403

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title = "Level-crossing induced spin phenomena in SiC: A theoretical study",

abstract = "A theoretical approach is proposed to describe the spin dynamics in defect color centers. The method explicitly considers the spin dynamics in the ground state and excited state of the defect center as well as spin state dependent transitions involving the ground state, excited state, and an additional intermediate state. The proposed theory is applied to treat spin-dependent phenomena in silicon carbide, namely, in spin-32 silicon-vacancy centers, termed VSi or V2 centers. Theoretical predictions of magnetic field dependent photoluminescence intensity and optically detected magnetic resonance spectra demonstrate an important role of level-crossing phenomena in the spin dynamics of the ground state and excited state. The results are in good agreement with previously published experimental data [Phys. Rev. X 6, 031014 (2016)10.1103/PhysRevX.6.031014].",

keywords = "SINGLE-SPIN, DIAMOND, VACANCY, DYNAMICS",

author = "Sosnovsky, {Denis V.} and Ivanov, {Konstantin L.}",

note = "Funding Information: This work has been supported by the Russian Science Foundation (Grant No. 20-63-46034). We acknowledge Prof. S. Tarasenko (Ioffe Institute, St. Petersburg), Prof. V. Dyakonov (University of W{\"u}rzburg), and Dr. G. Astakhov (HZDR, Dresden) for stimulating discussions and for providing experimental data on photoluminescence and ODMR. Publisher Copyright: {\textcopyright} 2021 American Physical Society. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",

year = "2021",

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doi = "10.1103/PhysRevB.103.014403",

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N1 - Funding Information: This work has been supported by the Russian Science Foundation (Grant No. 20-63-46034). We acknowledge Prof. S. Tarasenko (Ioffe Institute, St. Petersburg), Prof. V. Dyakonov (University of Würzburg), and Dr. G. Astakhov (HZDR, Dresden) for stimulating discussions and for providing experimental data on photoluminescence and ODMR. Publisher Copyright: © 2021 American Physical Society. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/1/5

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N2 - A theoretical approach is proposed to describe the spin dynamics in defect color centers. The method explicitly considers the spin dynamics in the ground state and excited state of the defect center as well as spin state dependent transitions involving the ground state, excited state, and an additional intermediate state. The proposed theory is applied to treat spin-dependent phenomena in silicon carbide, namely, in spin-32 silicon-vacancy centers, termed VSi or V2 centers. Theoretical predictions of magnetic field dependent photoluminescence intensity and optically detected magnetic resonance spectra demonstrate an important role of level-crossing phenomena in the spin dynamics of the ground state and excited state. The results are in good agreement with previously published experimental data [Phys. Rev. X 6, 031014 (2016)10.1103/PhysRevX.6.031014].

AB - A theoretical approach is proposed to describe the spin dynamics in defect color centers. The method explicitly considers the spin dynamics in the ground state and excited state of the defect center as well as spin state dependent transitions involving the ground state, excited state, and an additional intermediate state. The proposed theory is applied to treat spin-dependent phenomena in silicon carbide, namely, in spin-32 silicon-vacancy centers, termed VSi or V2 centers. Theoretical predictions of magnetic field dependent photoluminescence intensity and optically detected magnetic resonance spectra demonstrate an important role of level-crossing phenomena in the spin dynamics of the ground state and excited state. The results are in good agreement with previously published experimental data [Phys. Rev. X 6, 031014 (2016)10.1103/PhysRevX.6.031014].

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