Laser-induced damage threshold of the nonlinear crystals BaGa4Se7 and BaGa2GeSe6 at 2091 nm in the nanosecond regime

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Abstract

The surface laser-induced damage threshold (LIDT) of BaGa4Se7 and BaGa2GeSe6 nonlinear crystals was studied at 2091 nm. Both yellow and dark yellow phases of BaGa4Se7 were investigated. The Ho:YAG laser generating nanosecond pulses at 2 kHz, 5 kHz, and 10 kHz was used as a radiation source. The R-on-1 procedure was applied to determine the 0% probability damage threshold. The LIDT of the dark yellow phase of BaGa4Se7 without cleavage planes is very close to the BaGa2GeSe6 LIDT and exceeds by ca. 30% the LIDT of the yellow phase of BaGa4Se7 at 2 and 5 kHz.

Original languageEnglish
Pages (from-to)2655-2659
Number of pages5
JournalJournal of the Optical Society of America B: Optical Physics
Volume37
Issue number9
DOIs
Publication statusPublished - 1 Sep 2020

Keywords

  • MU-M

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