Laser-Induced Damage Threshold of dark yellow phase BaGa4Se7 Crystal at 1053 nm

A. A. Boyko, E. Yu Eryshin, N. Yu Kostyukova, D. B. Kolker, A. I. Kostyukov, I. B. Miroshnichenko, D. V. Badikov, V. V. Badikov

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Abstract

Laser induced damage in dark yellow phase of BaGa4Se7 (BGSe) crystal has been investigated at the wavelengths of 1053 nm. Damage by multiple pulse irradiation (500 pulses) has been studied and the probabilistic behavior of the damage is discussed.

Original languageEnglish
Title of host publicationProceedings - International Conference Laser Optics 2020, ICLO 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728152332
DOIs
Publication statusPublished - 2 Nov 2020
Event2020 International Conference Laser Optics, ICLO 2020 - St. Petersburg, Russian Federation
Duration: 2 Nov 20206 Nov 2020

Publication series

NameProceedings - International Conference Laser Optics 2020, ICLO 2020

Conference

Conference2020 International Conference Laser Optics, ICLO 2020
CountryRussian Federation
CitySt. Petersburg
Period02.11.202006.11.2020

Keywords

  • BaGa4Se7 crystal
  • barium chalcogenides
  • laser-induced damage threshold (LIDT)

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