Laser-induced damage threshold of BaGa4Se7 and BaGa2GeSe6 nonlinear crystals at 1.053 μm

Nadezhda Y. Kostyukova, Andrey A. Boyko, Evgenii Y. Erushin, Anton I. Kostyukov, Valeriy V. Badikov, Dmitrii V. Badikov, Dmitry B. Kolker

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We investigated the laser-induced damage threshold of two barium chalcogenides crystals, BaGa4Se7 and BaGa2GeSe6, at 1.053 μm radiation with a pulse duration of 7–10 ns at different pulse repetition rates, namely, 100 Hz, 500 Hz, and 1 kHz. The R-on-1 procedure was applied to determine the 0% probability damage threshold. Both crystals have close values of surface damage threshold at 0.1 kHz, 299 MW∕cm2 (2.28 J∕cm2) for BaGa2GeSe6, and 319 MW∕cm2 (2.30 J∕cm2) for BaGa4Se7

Original languageEnglish
Pages (from-to)2260-2265
Number of pages6
JournalJournal of the Optical Society of America B: Optical Physics
Volume36
Issue number8
DOIs
Publication statusPublished - 1 Aug 2019

Keywords

  • DIFFERENCE-FREQUENCY-GENERATION
  • HIGH-EFFICIENCY
  • PULSES
  • POWER

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