Large anisotropic spin relaxation time of exciton bound to donor states in triple quantum wells

S. Ullah, G. M. Gusev, A. K. Bakarov, F. G.G. Hernandez

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4 Citations (Scopus)

Abstract

We have studied the spin dynamics of a dense two-dimensional electron gas confined in a GaAs/AlGaAs triple quantum well by using time-resolved Kerr rotation and resonant spin amplification. Strong anisotropy of the spin relaxation time up to a factor of 10 was found between the electron spins oriented in-plane and out-of-plane when the excitation energy is tuned to an exciton bound to neutral donor transition. We model this anisotropy using an internal magnetic field and the inhomogeneity of the electron g-factor. The data analysis allows us to determine the direction and magnitude of this internal field in the range of a few mT for our studied structure, which decreases with the sample temperature and optical power. The dependence of the anisotropic spin relaxation was directly measured as a function of several experimental parameters: excitation wavelength, sample temperature, pump-probe time delay, and pump power.

Original languageEnglish
Article number205703
Number of pages6
JournalJournal of Applied Physics
Volume121
Issue number20
DOIs
Publication statusPublished - 28 May 2017

Keywords

  • COHERENCE
  • ELECTRONS
  • SEMICONDUCTORS
  • AMPLIFICATION
  • SYSTEM
  • GAAS

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