Ion-beam synthesis of InSb nanocrystals at the Si/SiO2 interface

Ida Tyschenko, Ruonan Zhang, Vladimir Volodin, Vladimir Popov

Research output: Contribution to journalArticlepeer-review

Abstract

The formation of InSb nanocrystals at the bonding Si/SiO2 interface of silicon-on-insulator structure was obtained as a result of the In and Sb atom diffusion from the ion-implanted SiO2 and Si regions, respectively, toward the interface. After the annealing at 1000 °C, the Raman scattering peaks corresponding to the transverse and longitudinal optical phonon mode in the monocrystalline InSb matrix were obtained. As the annealing temperature grew to 1100 °C, the transverse optical phonon mode vanished and the longitudinal optical phonon mode dominated in the spectrum. This effect is explained by matching InSb and Si lattice constants under ion-beam synthesis conditions.

Original languageEnglish
Article number131027
JournalMaterials Letters
Volume306
DOIs
Publication statusPublished - 1 Jan 2022

Keywords

  • Antimony
  • Diffusion
  • Indium
  • Ion implantation
  • Nanocrystals
  • Si/SiO interface

OECD FOS+WOS

  • 2.05 MATERIALS ENGINEERING
  • 1.03 PHYSICAL SCIENCES AND ASTRONOMY

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