Investigation of Hf(Zr)O2 film ferroelectric properties grown by atomic layer deposition method

Ramin M.H. Iskhakzay, Vladimir Sh Aliev, Vladimir A. Gritsenko

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Abstract

The results of the film ferroelectric properties investigation based on mixed oxide Hf(Zr)O2 are described. The Hf(Zr)O2 structures I-V characteristics were measured and analyzed before and after the 'wake up' operation, and the electric field dependence of the polarization P(E) was calculated. The switching cycles number dependence of the maximum polarization Pmax(n) was obtained, and the stability of Hf(Zr)O2-based structures to 107 switching cycles was confirmed.

Original languageEnglish
Title of host publication2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings
PublisherIEEE Computer Society
Pages12-15
Number of pages4
Volume2018-July
ISBN (Print)9781538650219
DOIs
Publication statusPublished - 13 Aug 2018
Event19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Erlagol, Altai, Russian Federation
Duration: 29 Jun 20183 Jul 2018

Conference

Conference19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018
CountryRussian Federation
CityErlagol, Altai
Period29.06.201803.07.2018

Keywords

  • 'Wake up' operation
  • Ferroelectric memory
  • Ferroelectricit
  • Hf(Zr)O structure
  • Nonvolatile memory

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