Interface Studies in HgTe/HgCdTe Quantum Wells

Nikolay Mikhailov, Vasiliy Shvets, Danil Ikusov, Ivan Uzhakov, Sergey Dvoretsky, Karim Mynbaev, Piotr Dluzewski, Jerzy Morgiel, Zbigniew Swiatek, Olexander Bonchyk, Ihor Izhnin

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Transmission electron microscopy (TEM) is used for the study of interfaces in two HgTe/HgCdTe single quantum-well (QW) structures grown by molecular beam epitaxy on GaAs substrates. The studies are conducted in bright-field and scanning/high-angle annular dark field modes. The effect of the growth mode on the sharpness of interfaces in the QWs is investigated. Effective in situ ellipsometric control over chemical composition and thickness of the layers constituting the QW structures is demonstrated.

Original languageEnglish
Article number1900598
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Volume257
Issue number5
DOIs
Publication statusPublished - 1 May 2020

Keywords

  • composition profiles
  • ellipsometry
  • HgTe/HgCdTe quantum wells
  • interfaces
  • transmission electron microscopy
  • HgTe
  • HgCdTe quantum wells
  • DAMAGE

Fingerprint Dive into the research topics of 'Interface Studies in HgTe/HgCdTe Quantum Wells'. Together they form a unique fingerprint.

Cite this