Infrared photoluminescence from GeO[SiO2] and GeO[SiO] solid alloy layers irradiated with swift heavy Xe ions

S. G. Cherkova, V. A. Volodin, V. A. Skuratov, M. Stoffel, H. Rinnert, M. Vergnat

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2 Citations (Scopus)

Abstract

Germanium silicate suboxide films deposited from GeO/SiO and GeO/SiO2 precursors onto Si(001) substrates using evaporation in high vacuum were modified by swift heavy ions. The films were irradiated by 167 MeV Xe+26 ions with fluences varying from 1011 to 1013 cm−2. We report photoluminescence in the infrared range both at low and at room temperature, which is most probably due to defect-induced radiative transitions in the films.

Original languageEnglish
Article number117238
Number of pages4
JournalJournal of Luminescence
Volume223
DOIs
Publication statusPublished - Jul 2020

Keywords

  • Defects
  • Ge and Si oxides
  • Photoluminescence
  • Swift heavy ions
  • FILMS
  • OXIDE
  • NANOCRYSTALS

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