Influence of a silicon impurity on growth of diamond crystals in the Mg-C system

Alexander F. Khokhryakov, Yuri N. Palyanov, Yuri M. Borzdov, Anton S. Kozhukhov, Dmitriy V. Sheglov

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


This article reports a study of the morphology of diamond crystals grown at 7.0 GPa and 1800 °C in the Mg-C system with the addition of silicon in an amount of 0.5 wt%. Step patterns on {111} and {100} faces were studied in a wide range of magnifications using optical microscopy (DIC), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Morphological studies revealed that a reduction in the growth rate and a change in the morphological significance of the {100} and {111} faces were associated with adsorption of a mobile impurity (silicon) leading to poisoning of kinks and (or) steps. This leads to roughing of the faces and formation of macrosteps as well as 2D and 3D nucleation islands. At a silicon concentration of 1.0 wt% or more, immobile impurity particles are apparently formed on macrostep terraces, and growth inhibition occurs according to the Cabrera-Vermilyea model.

Original languageEnglish
Pages (from-to)27-34
Number of pages8
JournalDiamond and Related Materials
Publication statusPublished - 1 Aug 2018


  • High pressure high temperature (HTHP)
  • Impurity adsorption
  • Morphology
  • Surface microscopy
  • Synthetic diamond
  • 100 FACES

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