Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

D. S. Abramkin, M. O. Petrushkov, E. A. Emel’yanov, M. A. Putyato, B. R. Semyagin, A. V. Vasev, M. Yu Esin, I. D. Loshkarev, A. K. Gutakovskii, V. V. Preobrazhenskii, T. S. Shamirzaev

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The influence of dislocation filters based on low-temperature layers (LT) of GaAs and postgrowth annealing on the perfection of GaAs/Si heterostructures is discussed. It is shown that LT-GaAs layers reduce the density of threading dislocations and surface roughness. Post-growth annealing at a temperature of 650 °C reduces the concentration of nonradiative recombination centers in GaAs/Si layers to a level close to the level in GaAs layers grown on a matched substrate.

Original languageEnglish
Pages (from-to)181-186
Number of pages6
JournalOptoelectronics, Instrumentation and Data Processing
Volume54
Issue number2
DOIs
Publication statusPublished - 1 Mar 2018

Keywords

  • dislocation filter
  • epitaxy
  • low-temperature GaAs
  • GROWN GAAS
  • FILMS
  • COEFFICIENT
  • MOLECULAR-BEAM EPITAXY
  • ON-SI
  • DENSITY REDUCTION
  • MISFIT
  • MOCVD
  • DEPENDENCE

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