Abstract
A new method of obtaining polycrystalline silicon is proposed which is based on indium-induced crystallization of thin films of amorphous silicon suboxide with stoichiometric coefficient 0.5 (a-SiO0.5). It is established that the use of indium in the course of a-SiO0.5 annealing allows the crystallization temperature to be reduced to 600°C, which is significantly below the temperature of solid-phase crystallization of this material (850°C). The process of indium-induced crystallization of a-SiO0.5 in high vacuum leads to the formation of free-standing micron sized particles of crystalline silicon.
Original language | English |
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Pages (from-to) | 583-586 |
Number of pages | 4 |
Journal | Technical Physics Letters |
Volume | 46 |
Issue number | 6 |
DOIs | |
Publication status | Published - 1 Jun 2020 |
Keywords
- indium-induced crystallization
- polycrystalline silicon
- silicon suboxide
- thin films