Indium-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide

A. O. Zamchiy; E. A. Baranov; I. E. Merkulova; N. A. Lunev; V. A. Volodin; E. A. Maksimovskii

doi:10.1134/S1063785020060280

Indium-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide

A. O. Zamchiy, E. A. Baranov, I. E. Merkulova, N. A. Lunev, V. A. Volodin, E. A. Maksimovskii

Research output: Contribution to journal › Article › peer-review

Abstract

A new method of obtaining polycrystalline silicon is proposed which is based on indium-induced crystallization of thin films of amorphous silicon suboxide with stoichiometric coefficient 0.5 (a-SiO_0.5). It is established that the use of indium in the course of a-SiO_0.5 annealing allows the crystallization temperature to be reduced to 600°C, which is significantly below the temperature of solid-phase crystallization of this material (850°C). The process of indium-induced crystallization of a-SiO_0.5 in high vacuum leads to the formation of free-standing micron sized particles of crystalline silicon.

Original language	English
Pages (from-to)	583-586
Number of pages	4
Journal	Technical Physics Letters
Volume	46
Issue number	6
DOIs	https://doi.org/10.1134/S1063785020060280
Publication status	Published - 1 Jun 2020

Keywords

indium-induced crystallization
polycrystalline silicon
silicon suboxide
thin films

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10.1134/S1063785020060280

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title = "Indium-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide",

abstract = "A new method of obtaining polycrystalline silicon is proposed which is based on indium-induced crystallization of thin films of amorphous silicon suboxide with stoichiometric coefficient 0.5 (a-SiO0.5). It is established that the use of indium in the course of a-SiO0.5 annealing allows the crystallization temperature to be reduced to 600°C, which is significantly below the temperature of solid-phase crystallization of this material (850°C). The process of indium-induced crystallization of a-SiO0.5 in high vacuum leads to the formation of free-standing micron sized particles of crystalline silicon.",

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AU - Zamchiy, A. O.

AU - Baranov, E. A.

AU - Merkulova, I. E.

AU - Lunev, N. A.

AU - Volodin, V. A.

AU - Maksimovskii, E. A.

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AB - A new method of obtaining polycrystalline silicon is proposed which is based on indium-induced crystallization of thin films of amorphous silicon suboxide with stoichiometric coefficient 0.5 (a-SiO0.5). It is established that the use of indium in the course of a-SiO0.5 annealing allows the crystallization temperature to be reduced to 600°C, which is significantly below the temperature of solid-phase crystallization of this material (850°C). The process of indium-induced crystallization of a-SiO0.5 in high vacuum leads to the formation of free-standing micron sized particles of crystalline silicon.

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