High-Temperature PIN Diodes Based on Amorphous Hydrogenated Silicon-Carbon Alloys and Boron-Doped Diamond Thin Films

The Ha Stuchlikova, Jiri Stuchlik, Zdenek Remes, Andrew Taylor, Vincent Mortet, Petr Ashcheulov, Ivan Gregora, Grigoriy Krivyakin, Vladimir Volodin

Research output: Contribution to journalArticlepeer-review

Abstract

Amorphous SiC:H (a-SiC:H) diode structures with different ratios of Si:C are deposited on transparent conductive boron-doped diamond-coated fused silica substrates by plasma-enhanced chemical vapor deposition. The boron-doped diamond thin films have been deposited at temperature 720 °C on the fused silica substrates with a Ti grid used to enhance electrical conductivity. The thin-film structures based on P-type, Intrinsic and N-type a-SiC:H thin films, shortly a-SiC:H PIN diodes, are characterized by current–voltage measurements under solar simulator illumination. For comparison, the same PIN structures are deposited on fluorine-doped tin oxide. Before deposition of the diode structures, the surface morphology is studied by scanning electron microscopy, and undoped layers deposited on the quartz substrates are characterized by temperature-resolved electrical resistivity, optical absorptance, Raman spectroscopy, and photoluminescence.

Original languageEnglish
Article number1900247
Number of pages6
JournalPhysica Status Solidi (B) Basic Research
Volume257
Issue number6
DOIs
Publication statusPublished - 1 Jun 2020

Keywords

  • a-SiC:H
  • boron-doped diamond
  • fluorine-doped tin oxide
  • I–V characteristics
  • PIN diodes
  • DENSITY
  • PHOTOLUMINESCENCE
  • CARBIDE
  • H
  • GAP STATES
  • I-V characteristics
  • a-SiC

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