High-power microwave photodiodes with Schottky contact based on InAlAs/InGaAs/InP heteroepitaxial structures

K. S. Zhuravlev, N. A. Valisheva, M. S. Aksenov, D. D. Dmitriev, A. I. Toropov, I. B. Chistokhin, A. M. Gilinsky, D. Y. Protasov, S. A. Malyshev, A. L. Chizh, K. B. Mikitchuk

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Abstract

Dark current-voltage characteristics, sensitivity and microwave characteristics of photodiodes based on InAlAs/InGaAs (0.6-1.5 μm)/InP(001) heteroepitaxial layers with Schottky barrier and mesa structure were studied. It is shown that the dark current at reverse bias of 2 V for photodiodes with diameters from 10 to 40 μm does not exceed 1××10-10 A. The sensitivity of photodiodes of different diameters with an InGaAs absorbing layer of 640 nm thick is not less than 0.55 W. For Schottky photodiodes with a diameter of 15 μm, cutoff frequency is 28 GHz and maximal output microwave power is 58 mW at the frequency of 20 GHz.

Original languageEnglish
Title of host publication2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Electronic)9781728107165
DOIs
Publication statusPublished - 1 May 2019
Event2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Guangzhou, China
Duration: 19 May 201922 May 2019

Publication series

Name2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings

Conference

Conference2019 IEEE MTT-S International Wireless Symposium, IWS 2019
CountryChina
CityGuangzhou
Period19.05.201922.05.2019

Keywords

  • 1.55 μm
  • I-V
  • InAlAs/InGaAs/InP
  • microwave photodiode
  • microwave power
  • sensitivity
  • 1.55 mu m

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