High mobility oxide complementary tfts for system-on-display and three-dimensional brain-mimicking ic

Albert Chin, Te Jui Yen, You Da Chen, Cheng Wei Shih, Vladimir Gritsenko

Research output: Contribution to journalConference articlepeer-review

Abstract

One technology bottleneck for system-on-panel (SoP) is the lacking of high-performance p-type thin-film transistor (pTFT). Using high dielectric-constant (high-κ) gate materials with optimized processes, high hole and electron field-effect mobility of 7.6 and 345 cm2/Vs were measured in pTFT and nTFT, respectively. These high mobility devices on SiO2 are the enabling technology for SoP and crucial for three-dimensional brain-mimicking integrated circuit (IC)-the technology trend for IC after reaching the quantum-mechanical limit soon.

Original languageEnglish
Pages (from-to)292-294
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Volume52
Issue numberS1
DOIs
Publication statusPublished - 2021
EventInternational Conference on Display Technology, ICDT 2020 - Wuhan, China
Duration: 18 Oct 202021 Oct 2020

Keywords

  • Brain-mimicking integrated circuit
  • Complementary TFTs
  • High mobility
  • N-type TFT
  • P-type TFT
  • SnO pTFT
  • System-on-panel
  • ZnO nTFT

OECD FOS+WOS

  • 1.03 PHYSICAL SCIENCES AND ASTRONOMY

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