Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates

D. S. Abramkin; M. O. Petrushkov; M. A. Putyato; B. R. Semyagin; T. S. Shamirzaev

doi:10.1134/S1063782618110039

Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates

D. S. Abramkin, M. O. Petrushkov, M. A. Putyato, B. R. Semyagin, T. S. Shamirzaev

Section of Automation of Physical and Technical Research

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Heterostructures with InAs/AlAs quantum dots are grown on GaAs/Si hybrid substrates. The experimentally observed low-temperature (5–80 K) photoluminescence spectra of InAs/AlAs/GaAs/Si heterostructures exhibit bands defined by excitonic recombination in quantum dots and a wetting layer, i.e., a thin quantum well lying at the base of the array of quantum dots. Temperature quenching of the photoluminescence of quantum dots occurs due to the direct trapping of charge carriers at defects localized in the AlAs matrix, in the vicinity of the quantum dots.

Original language	English
Pages (from-to)	1484-1490
Number of pages	7
Journal	Semiconductors
Volume	52
Issue number	11
DOIs	https://doi.org/10.1134/S1063782618110039
Publication status	Published - 1 Nov 2018

Keywords

ATOMIC-HYDROGEN
SI
EPITAXY
PHOTOLUMINESCENCE
PERFECTION
DEFECTS
LAYERS

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10.1134/S1063782618110039

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title = "Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates",

abstract = "Heterostructures with InAs/AlAs quantum dots are grown on GaAs/Si hybrid substrates. The experimentally observed low-temperature (5–80 K) photoluminescence spectra of InAs/AlAs/GaAs/Si heterostructures exhibit bands defined by excitonic recombination in quantum dots and a wetting layer, i.e., a thin quantum well lying at the base of the array of quantum dots. Temperature quenching of the photoluminescence of quantum dots occurs due to the direct trapping of charge carriers at defects localized in the AlAs matrix, in the vicinity of the quantum dots.",

keywords = "ATOMIC-HYDROGEN, SI, EPITAXY, PHOTOLUMINESCENCE, PERFECTION, DEFECTS, LAYERS",

author = "Abramkin, {D. S.} and Petrushkov, {M. O.} and Putyato, {M. A.} and Semyagin, {B. R.} and Shamirzaev, {T. S.}",

year = "2018",

month = nov,

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doi = "10.1134/S1063782618110039",

language = "English",

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pages = "1484--1490",

journal = "Semiconductors",

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T1 - Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates

AU - Abramkin, D. S.

AU - Petrushkov, M. O.

AU - Putyato, M. A.

AU - Semyagin, B. R.

AU - Shamirzaev, T. S.

PY - 2018/11/1

Y1 - 2018/11/1

N2 - Heterostructures with InAs/AlAs quantum dots are grown on GaAs/Si hybrid substrates. The experimentally observed low-temperature (5–80 K) photoluminescence spectra of InAs/AlAs/GaAs/Si heterostructures exhibit bands defined by excitonic recombination in quantum dots and a wetting layer, i.e., a thin quantum well lying at the base of the array of quantum dots. Temperature quenching of the photoluminescence of quantum dots occurs due to the direct trapping of charge carriers at defects localized in the AlAs matrix, in the vicinity of the quantum dots.

AB - Heterostructures with InAs/AlAs quantum dots are grown on GaAs/Si hybrid substrates. The experimentally observed low-temperature (5–80 K) photoluminescence spectra of InAs/AlAs/GaAs/Si heterostructures exhibit bands defined by excitonic recombination in quantum dots and a wetting layer, i.e., a thin quantum well lying at the base of the array of quantum dots. Temperature quenching of the photoluminescence of quantum dots occurs due to the direct trapping of charge carriers at defects localized in the AlAs matrix, in the vicinity of the quantum dots.

KW - ATOMIC-HYDROGEN

KW - SI

KW - EPITAXY

KW - PHOTOLUMINESCENCE

KW - PERFECTION

KW - DEFECTS

KW - LAYERS

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DO - 10.1134/S1063782618110039

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SP - 1484

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JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 11

ER -

Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates

Abstract

Keywords

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