Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates

D. S. Abramkin, M. O. Petrushkov, M. A. Putyato, B. R. Semyagin, T. S. Shamirzaev

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Heterostructures with InAs/AlAs quantum dots are grown on GaAs/Si hybrid substrates. The experimentally observed low-temperature (5–80 K) photoluminescence spectra of InAs/AlAs/GaAs/Si heterostructures exhibit bands defined by excitonic recombination in quantum dots and a wetting layer, i.e., a thin quantum well lying at the base of the array of quantum dots. Temperature quenching of the photoluminescence of quantum dots occurs due to the direct trapping of charge carriers at defects localized in the AlAs matrix, in the vicinity of the quantum dots.

Original languageEnglish
Pages (from-to)1484-1490
Number of pages7
JournalSemiconductors
Volume52
Issue number11
DOIs
Publication statusPublished - 1 Nov 2018

Keywords

  • ATOMIC-HYDROGEN
  • SI
  • EPITAXY
  • PHOTOLUMINESCENCE
  • PERFECTION
  • DEFECTS
  • LAYERS

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