Growth of Bi2Se3/graphene heterostructures with the room temperature high carrier mobility

I. V. Antonova, N. A. Nebogatikova, N. P. Stepina, V. A. Volodin, V. V. Kirienko, M. G. Rybin, E. D. Obrazstova, V. A. Golyashov, K. A. Kokh, O. E. Tereshchenko

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1 Citation (Scopus)


Heterostructures of Bi2Se3 topological insulators were epitaxially grown on graphene by means of the physical vapor deposition at 500 °C. Micrometer-sized flakes with thickness 1 QL (quintuple layer ~ 1 nm) and films of millimeter-scale with thicknesses 2–6 QL had been grown on CVD graphene. The minimum thickness of large-scaled continuous Bi2Se3 films was found to be ~ 8 QL for the regime used. The heterostructures with a Bi2Se3 film thickness of > 10 QL had resistivity as low as 200–500 Ω/sq and a high room temperature carrier mobility ~ 1000–3400 cm2/Vs in the Bi2Se3/graphene interface channel. Moreover, the coexistence of a p-type graphene-related conductive channel, simultaneously with the n-type conductive surface channel of Bi2Se3, was observed. The improvement of the bottom Bi2Se3/graphene interface with the increase in the growth time clearly manifested itself in the increase of conductivity and carrier mobility in the grown layer. The grown Bi2Se3/G structures have lower resistivities and more than one order of magnitude higher carrier mobilities in comparison with the van der Waals Bi2Se3/graphene heterostructures created employing exfoliation of thin Bi2Se3 layers. The grown heterostructures demonstrated the properties that are perspective for new functional devices, for a variety of signal processing and logic applications.

Original languageEnglish
Pages (from-to)9330–9343
Number of pages14
JournalJournal of Materials Science
Issue number15
Publication statusPublished - May 2021




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