GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

D. S. Abramkin, M. O. Petrushkov, M. A. Putyato, B. R. Semyagin, E. A. Emelyanov, V. V. Preobrazhenskii, A. K. Gutakovskii, T. S. Shamirzaev

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Molecular-beam epitaxy is used to produce GaP/Si hybrid substrates that allow the growth of highly efficient light-emitting heterostructures with GaAs/GaP quantum wells. Despite the relatively high concentration of nonradiative-recombination centers in GaP/Si layers, GaAs/GaP quantum-well heterostructures grown on GaP/Si hybrid substrates are highly competitive in terms of efficiency and temperature stability of luminescence to similar heterostructures grown on lattice-matched GaP substrates.

Original languageEnglish
Pages (from-to)1143-1147
Number of pages5
JournalSemiconductors
Volume53
Issue number9
DOIs
Publication statusPublished - 1 Sep 2019

Keywords

  • GaP on Si
  • hybrid substrates
  • molecular-beam epitaxy
  • photoluminescence
  • quantum wells
  • SEMICONDUCTORS
  • SILICON
  • GAP

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