Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors

A. V. Nenashev, J. O. Oelerich, A. V. Dvurechenskii, F. Gebhard, S. D. Baranovskii

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

Using analytical arguments and computer simulations, we show that the dependence of the hopping carrier mobility on the electric field μ(F)/μ(0) in a system of random sites is determined by the localization length a, and not by the concentration of sites N. This result is in drastic contrast to what is usually assumed in the literature for a theoretical description of experimental data and for device modeling, where N-1/3 is considered as the decisive length scale for μ(F). We show that although the limiting value μ(F→0) is determined by the ratio N-1/3/a, the dependence μ(F)/μ(0) is sensitive to the magnitude of a, and not to N-1/3. Furthermore, our numerical and analytical results prove that the effective temperature responsible for the combined effect of the electric field F and the real temperature T on the hopping transport via spatially random sites can contain the electric field only in the combination eFa.

Original languageEnglish
Article number035204
Number of pages7
JournalPhysical Review B
Volume96
Issue number3
DOIs
Publication statusPublished - 21 Jul 2017

Keywords

  • CARRIER TRANSPORT
  • EFFECTIVE TEMPERATURE
  • DOPED POLYMERS
  • BAND TAILS
  • SOLIDS
  • RECOMBINATION
  • ELECTRONS

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