Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions

V. L. Alperovich, I. O. Akhundov, D. M. Kazantsev, N. S. Rudaya, E. E. Rodyakina, A. S. Kozhukhov, D. V. Sheglov, A. N. Karpov, N. L. Shwartz, A. S. Terekhov, Alexander V. Latyshev

Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

Abstract

"Step-and-terrace" surface morphology, with regular arrays of atomically flat terraces separated by monatomic steps was obtained by annealing GaAs(001) substrates in conditions close to equilibrium. The closeness of annealing conditions to equilibrium was determined by experiments on samples with lithographic marks. The annealing kinetics are characterized by full-length monatomic steps, and also by Fourier and autocorrelation analyses. A comparison of the experiment with Monte Carlo simulation enabled us to elucidate the main stages and microscopic mechanisms of the step-terraced morphology formation, and to evaluate the effective parameters which determined this process. The formation of straight dislocation-induced steps of monatomic height were studied under thermo-mechanical stress relaxation in GaAs/AlGaAs heterostructures bonded to glass.

Original languageEnglish
Title of host publicationAdvances in Semiconductor Nanostructures
Subtitle of host publicationGrowth, Characterization, Properties and Applications
EditorsAV Latyshev, AV Dvurechenskii, AL Aseev
PublisherElsevier Science Inc.
Pages255-277
Number of pages23
ISBN (Electronic)9780128105139
ISBN (Print)9780128105122
DOIs
Publication statusPublished - 1 Jan 2017

Keywords

  • Annealing
  • Atomic steps
  • Dislocations
  • GaAs
  • Heterostructures
  • Monte Carlo simulation
  • Ostwald ripening
  • Step-terraced morphology
  • Stress relaxation
  • Surface smoothing
  • VICINAL SURFACES
  • RELAXATION
  • GAAS(001) SURFACE
  • ANISOTROPY
  • MISFIT DISLOCATIONS
  • FILMS
  • GROWTH
  • DIFFUSION
  • MONTE-CARLO-SIMULATION
  • MORPHOLOGY

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