Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties

A. E. Klimov, A. N. Akimov, I. O. Akhundov, V. A. Golyashov, D. V. Gorshkov, D. V. Ishchenko, E. V. Matyushenko, I. G. Neizvestny, G. Yu Sidorov, S. P. Suprun, A. S. Tarasov, O. E. Tereshchenko, V. S. Epov

Research output: Contribution to journalArticlepeer-review

Abstract

The characteristics of metal-insulator-semiconductor (MIS) structures based on insulating PbSnTe:In films with compositions in the vicinity of band inversion grown by molecular-beam epitaxy (MBE) are studied. It is shown that a number of features of the films can be due to a ferroelectric phase transition with a Curie temperature in the range of about T ≈ 15–20 K.

Original languageEnglish
Pages (from-to)1325-1331
Number of pages7
JournalSemiconductors
Volume54
Issue number10
DOIs
Publication statusPublished - 1 Oct 2020

Keywords

  • ferroelectric phase transition
  • field effect
  • MIS structure
  • PbSnTe:In solid solution
  • SOLID-SOLUTIONS
  • PbSnTe
  • In solid solution

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