Fabrication of polycrystalline silicon thin films by gold-induced crystallization of amorphous silicon suboxide

A. O. Zamchiy, E. A. Baranov, S. V. Starinskiy, N. A. Lunev, I. E. Merkulova

Research output: Contribution to journalArticlepeer-review

Abstract

In this work, polycrystalline silicon (poly-Si) thin films were synthesized using Au-induced crystallization of amorphous silicon suboxide for the first time. The structure and elemental composition of the substrate/Au/a-SiO0.4 stacked structure annealed at 500–700°C were investigated by transmission electron microscopy (TEM), Raman, and energy-dispersive X-ray spectroscopy (EDX). TEM and Raman methods confirmed the formation of a poly-Si thin film in the bottom layer (on the substrate) as a result of annealing. At the same time, TEM and EDX studies showed the formation of a thin (barrier) SiO2 layer with a thickness of ~5 nm located between the poly-Si thin film and the upper layer consisting of Au, Si, and O. Based on the results, a mechanism for the growth of poly-Si thin films is proposed which has features (dewetting of Au films and formation of a barrier SiO2 layer) that are not characteristic of the well-known layer exchange process.

Original languageEnglish
Article number110462
JournalVacuum
Volume192
DOIs
Publication statusPublished - Oct 2021

Keywords

  • Gold-induced crystallization
  • Phase transformation
  • Polycrystalline silicon
  • Silicon suboxide
  • Thin films

OECD FOS+WOS

  • 2.05 MATERIALS ENGINEERING
  • 1.03 PHYSICAL SCIENCES AND ASTRONOMY

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