Fabrication of graphitic layers in diamond using FIB implantation and high pressure high temperature annealing

S. Rubanov, A. Suvorova, V. P. Popov, A. A. Kalinin, Yu N. Pal'yanov

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

We have used high pressure high temperature annealing (HPHT) for graphitisation of implanted layers in diamond created by 30 keV Ga+ focused ion beam. Electron microscopy has been used to investigate the implanted layers. It has been revealed that, unlike annealing at vacuum pressure, the graphitization during HPHT annealing occurred through epitaxial growth of graphite (002) planes parallel to (111) diamond planes. High quality of graphite was confirmed by high resolution electron microscopy and electron energy loss spectroscopy.

Original languageEnglish
Pages (from-to)143-147
Number of pages5
JournalDiamond and Related Materials
Volume63
DOIs
Publication statusPublished - 1 Mar 2016

Keywords

  • Diamond
  • Graphitisation
  • Ion implantation

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