Evolution of photoemission properties on Cs/GaAs and GaAs(Cs,O) surfaces under thermal cycling

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Abstract

The photoemission properties on Cs/GaAs and GaAs(Cs,O) surfaces prepared at room temperature were studied under thermal cycling. The evolution of electron affinity and escape probability to vacuum was measured using photoemission quantum yield spectroscopy for the surfaces with various Cs-O overlayer compositions. It was found that an increase in the oxygen exposure led to the improvement in the thermal stability of electron affinity.

Original languageEnglish
Article number012128
JournalJournal of Physics: Conference Series
Volume1410
Issue number1
DOIs
Publication statusPublished - 20 Dec 2019
Event6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019 - Saint Petersburg, Russian Federation
Duration: 22 Apr 201925 Apr 2019

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