Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing

A. S. Petrov, S. V. Sitnikov, S. S. Kosolobov, A. V. Latyshev

Research output: Contribution to journalArticlepeer-review

Abstract

Abstract: The transformation of micropits on large terraces of the Si(111) surface containing no vicinal atomic steps has been investigated by in situ ultrahigh-vacuum reflection electron microscopy upon thermal annealing of the substrate in the range of 1200–1400°C. A procedure for the formation of micropits on large terraces of the Si(111) surface with the application of focused-ion-beam (Ga + ) technology has been proposed. It has been found that the micropit decay kinetics varies upon reaching the critical radius R crit , which is caused by the activation of nucleation of two-dimensional vacancy islands on the micropit bottom. A theoretical model describing variations in the lateral sizes of the micropit both before and after reaching R crit has been proposed. Based on analysis of the found temperature dependence of the nucleation frequencies of two-dimensional vacancy pits on the micropit bottom, the effective energy of nucleation of a vacancy island has been determined to be 4.1 ± 0.1 eV.

Original languageEnglish
Pages (from-to)434-438
Number of pages5
JournalSemiconductors
Volume53
Issue number4
DOIs
Publication statusPublished - 1 Apr 2019

Keywords

  • ATOMIC STEPS
  • KINETICS
  • NUCLEATION
  • MICROSCOPY
  • PHASE

Fingerprint Dive into the research topics of 'Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing'. Together they form a unique fingerprint.

Cite this