Enhanced optical properties of silicon based quantum dot heterostructures

Anatoly Dvurechenskii, Andrew Yakimov, Victor Kirienko, Alekcei Bloshkin, Vladimir Zinovyev, Aigul Zinovieva, Alexander Mudryi

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

2 Citations (Scopus)

Abstract

New approaches to enhance properties of silicon based quantum dot heterostructures for optical device application were developed. That is strain driven heteroepitaxy, small-sized quantum dots, elemental compositions of the heterointerface, virtual substrate, plasmonic effects, and the quantum dot charging occupation with holes in epitaxially grown Ge quantum dots (QDs) on Si(100). Experiments have shown extraordinary optical properties of Ge/Si QDs heterostructures and mid-infrared quantum dot photodetectors performance.

Original languageEnglish
Title of host publicationPhysics and Technology of Nanostructured Materials
PublisherTrans Tech Publications Ltd
Pages68-74
Number of pages7
Volume386 DDF
ISBN (Print)9783035714777
DOIs
Publication statusPublished - 1 Jan 2018
Event4th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-NANOMAT 2018 - Vladivostok, Russian Federation
Duration: 23 Sep 201828 Sep 2018

Conference

Conference4th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-NANOMAT 2018
CountryRussian Federation
CityVladivostok
Period23.09.201828.09.2018

Keywords

  • Ge
  • Infrared photodetector
  • Luminescence
  • Polariton
  • Quantum dot
  • Si
  • Surface plasmon

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