Energy Surface of Pit-Patterned Templates for Growth of Space-Arranged Arrays of Quantum Dots - Molecular Dynamics Calculations Using High-Efficiency Algorithms

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Abstract

Using MD simulation the energy surface of pit-patterned Si substrate is obtained. The physical model is based on empirical Tersoff potential, which governs the dynamics of an atomistic crystal system including Si and Ge atoms. The pits at the surface of Si substrate assume the shape of inverted truncated pyramid. The analysis of the energy surface mapped by MD calculations shows that the dense space-arranged array of nanoislands with up to 4 nanoislands per pit may be grown by the deposition of Ge on Si pit-patterned substrate. The calculations were carried using algorithm of parallel programming. The scheme of the parallel algorithm for Verlet neighbor list formation is suggested. The results of calculations using parallel algorithm are presented in form of the speedup depending on the cores number.

Original languageEnglish
Title of host publication2019 International Multi-Conference on Industrial Engineering and Modern Technologies, FarEastCon 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728100616
DOIs
Publication statusPublished - Oct 2019
Event2019 International Multi-Conference on Industrial Engineering and Modern Technologies, FarEastCon 2019 - Vladivostok, Russian Federation
Duration: 1 Oct 20194 Oct 2019

Publication series

Name2019 International Multi-Conference on Industrial Engineering and Modern Technologies, FarEastCon 2019

Conference

Conference2019 International Multi-Conference on Industrial Engineering and Modern Technologies, FarEastCon 2019
Country/TerritoryRussian Federation
CityVladivostok
Period01.10.201904.10.2019

Keywords

  • high-efficiency algorithms
  • molecular dynamics
  • prepatterned substrates
  • space-arranged arrays of quantum dots

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