Energy spectrum of charge carriers in elastically strained assemblies of Ge/Si quantum dots

A. A. Bloshkin, A. I. Yakimov, A. F. Zinovieva, V. A. Zinoviev, A. V. Dvurechenskii

Research output: Contribution to journalArticlepeer-review

Abstract

The results of studying the energy spectrum of electrons and holes localized in second-type Ge/Si heterostructures with Ge quantum dots are presented. In such structures, holes are localized at Ge quantum dots, and electrons, in three-dimensional quantum wells, which form in Si at the Ge-Si interface because of inhomogeneous deformations that appear as a result of the difference between the Ge and Si lattice constants. It is shown that changes in the deformations in the assembly of quantum dots as a result of a variation in their spatial arrangement significantly changes the binding energy of electrons, the position of their localization at quantum dots, the binding energy and wave-function symmetry of holes at double quantum dots (artificial molecules), and the exchange interaction of electrons and holes in the exciton composition. A practically important result of the presented data is the development of approaches to increase the luminescence quantum efficiency and the absorption coefficient in assemblies of quantum dots.

Original languageEnglish
Pages (from-to)306-316
Number of pages11
JournalJournal of Surface Investigation
Volume12
Issue number2
DOIs
Publication statusPublished - Mar 2018

Keywords

  • Elastic strain
  • Ge/Si heterostructure
  • Nanocrystal
  • Quantum dot
  • TRANSISTOR
  • SINGLE
  • PHOTOLUMINESCENCE
  • SIMULATION
  • FLASH MEMORY
  • DEPENDENCE
  • nanocrystal
  • BAND LINEUPS
  • TEMPERATURE
  • quantum dot
  • CRYSTALS
  • elastic strain
  • ELECTRONIC-STRUCTURE

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