Embedding of iron silicide nanocrystals into monocrystalline silicon: Suppression of emersion effect

Evgeniy Chusovitin, Dmitry Goroshko, Sergey Dotsenko, Alexander Shevlyagin, Anton Gutakovskii, Nikolay Galkin

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Abstract

The formation of iron silicide nanocrystals (NCs) and their embedding into monocrystalline silicon was studied. Solid phase epitaxy of 0.4 nm Fe at 630 °C resulted in formation of NCs consisted of β-FeSi2 and ϵ-FeSi phases. Annealing of NCs at 750 °C for 90 min led to transformation of β-FeSi2 and ϵ-FeSi into α-FeSi2. On the other hand, silicon layer growth over as-formed NCs, at the same temperature, resulted in formation of single phase NCs consisted of β-FeSi2. Silicon deposition rate proved to be the crucial point for a full embedding of NCs. The rate of 1 nm/min resulted in emersion of NCs to the surface during silicon overgrowth irrespective of Si cap layer thickness, while the rate of 8 nm/min led to the full embedding of β-FeSi2 NCs. Both incompletely and fully embedded β-FeSi2 NCs have epitaxial relationship and stress favorable for an indirect to direct band-gap transition at Y point.

Original languageEnglish
Title of host publicationAsia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics 2017
EditorsYuri N. Kulchin, Roman V. Romashko, Jyh-Chiang Jiang
PublisherSPIE
Number of pages8
Volume11024
ISBN (Electronic)9781510627147
DOIs
Publication statusPublished - 1 Jan 2019
Event16th Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics, APCOM 2017 - Taipei, Taiwan, Province of China
Duration: 5 Nov 20177 Nov 2017

Publication series

NameProceedings of SPIE
PublisherSPIE-INT SOC OPTICAL ENGINEERING
Volume11024
ISSN (Print)0277-786X

Conference

Conference16th Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics, APCOM 2017
CountryTaiwan, Province of China
CityTaipei
Period05.11.201707.11.2017

Keywords

  • embedded nanocrystals
  • epitaxy
  • phase transformation
  • silicon
  • β-FeSi
  • TRANSITION
  • TEMPERATURE
  • beta-FeSi2
  • FESI2
  • GAAS
  • SOLID-PHASE EPITAXY
  • QUANTUM DOTS

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