Electronic structure of stoichiometric and oxygen-deficient ferroelectric Hf0.5Zr0.5O2

T. V. Perevalov, D. R. Islamov, V. A. Gritsenko, I. P. Prosvirin

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

The electronic structure of oxygen-deficient Hf0.5Zr0.5O2 in the non-centrosymmetric orthorhombic (ferroelectric) phase was investigated by means of x-ray photoelectron spectroscopy and first-principle density functional theory calculations. It was established that a peak in the photoelectron spectra observed at an energy above the valence band top of ferroelectric Hf0.5Zr0.5O2 in ion-etched samples was due to oxygen vacancies. A method for evaluating the oxygen vacancies concentration in the material from the comparison of experimental and theoretical photoelectron spectra of the valence band is proposed. It is found that oxygen polyvacancies are not formed in ferroelectric Hf0.5Zr0.5O2: an energy-favorable spatial arrangement of several oxygen vacancies in the crystal corresponds to the configuration formed by noninteracting vacancies distant from each other. The oxygen vacancies in five charged states were simulated. The electron levels in the bandgap caused by charged oxygen vacancies indicate that any type of oxygen vacancies in ferroelectric Hf0.5Zr0.5O2 can capture both electrons and holes, i.e. can act as an amphoteric localization center for charge carriers.

Original languageEnglish
Article number194001
Number of pages8
JournalNanotechnology
Volume29
Issue number19
DOIs
Publication statusPublished - 11 May 2018

Keywords

  • ab initio calculations
  • charge localization
  • electronic structure
  • ferroelectrics
  • oxygen vacancy
  • XPS
  • THIN-FILMS
  • HFO2
  • ZRO2
  • INTERFACE
  • MECHANISM

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