Electron-Stimulated Aluminum Nitride Crystalline Phase Formation on the Sapphire Surface

Denis Milakhin, Timur Malin, Vladimir Mansurov, Yury Galitsyn, Konstantin Zhuravlev

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1 Citation (Scopus)

Abstract

The effect of a high-energy electron beam (11 keV) on the (0001) sapphire nitridation process is investigated. The high-energy electrons accelerate more than an order of magnitude the sapphire nitridation process. The effect is due to an increase of the Al and N atom concentrations on the sapphire surface caused by the electron-stimulated desorption of oxygen atoms and electron-stimulated decomposition of ammonia molecules.

Original languageEnglish
Article number1800516
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Volume256
Issue number6
DOIs
Publication statusPublished - 1 Jun 2019

Keywords

  • ammonia-MBE
  • electron-stimulated processes
  • III-nitrides
  • nitridation
  • reflection high-energy electron diffraction (RHEED)
  • reflection high-energy electron diffraction (RH EED)
  • AL2O3 SURFACE
  • ADSORPTION
  • EPITAXY
  • DESORPTION
  • GAN
  • SUBSTRATE
  • GROWTH
  • STRUCTURAL-PROPERTIES

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