Electron-hole transport in semiconductors: Stochastic dynamics simulation

Karl K. Sabelfeld, Anastasiya Kireeva

Research output: Contribution to journalConference articlepeer-review

Abstract

A random walk based stochastic simulation algorithm for solving a nonlinear system of transient drift-diffusion-Poisson equations for semiconductors with random doping profile is developed. The method is then applied to simulate and analyze the stochastic dynamics of the transport of electrons and holes in doped semiconductor material. This analysis has a theoretical but also a practical interest since an addition even of a small concentration of foreign atoms to the regular semiconductor material produces dramatic changes in the electrical properties. The nonlinear drift-diffusion-Poisson system is solved by the iteration procedure including alternating simulation of the drift-diffusion processes and solving the Poisson equation. Here, we extend the iteration algorithm to solve the drift-diffusion-Poisson system with additional term governing the random inputs in the system like the stochastic doping, random distribution of quantum dots, and an irregular family of defects. Impact of these random entries on the stochastic dynamics of the drift velocity and electron and hole concentrations is studied.

Original languageEnglish
Article number012044
JournalJournal of Physics: Conference Series
Volume1680
Issue number1
DOIs
Publication statusPublished - 21 Dec 2020
Event13th International Conference on Computer-Aided Technologies in Applied Mathematics, ICAM 2020 - Tomsk, Russian Federation
Duration: 7 Sep 20209 Sep 2020

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