Electron emission from Cs/GaAs and GaAs(Cs, О) with positive and negative electron affinity

A. G. Zhuravlev; V. S. Khoroshilov; V. L. Alperovich

doi:10.1134/S0021364017100149

Electron emission from Cs/GaAs and GaAs(Cs, О) with positive and negative electron affinity

A. G. Zhuravlev, V. S. Khoroshilov, V. L. Alperovich

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The evolution of probabilities of escape of hot and thermalized electrons from GaAs(001) with adsorbed cesium and oxygen layers to vacuum at the transition from positive to negative effective electron affinity is studied by the photoemission quantum yield spectroscopy. A minimum of the probability of escape of thermalized electrons near zero electron affinity is revealed and explained.

Original language	English
Pages (from-to)	686-690
Number of pages	5
Journal	JETP Letters
Volume	105
Issue number	10
DOIs	https://doi.org/10.1134/S0021364017100149
Publication status	Published - 1 May 2017

Keywords

ENHANCED THERMIONIC EMISSION
ENERGY
SURFACE
PHOTOEMISSION
QUANTIZATION
INTERFACE

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10.1134/S0021364017100149

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abstract = "The evolution of probabilities of escape of hot and thermalized electrons from GaAs(001) with adsorbed cesium and oxygen layers to vacuum at the transition from positive to negative effective electron affinity is studied by the photoemission quantum yield spectroscopy. A minimum of the probability of escape of thermalized electrons near zero electron affinity is revealed and explained.",

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author = "Zhuravlev, {A. G.} and Khoroshilov, {V. S.} and Alperovich, {V. L.}",

year = "2017",

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TY - JOUR

T1 - Electron emission from Cs/GaAs and GaAs(Cs, О) with positive and negative electron affinity

AU - Zhuravlev, A. G.

AU - Khoroshilov, V. S.

AU - Alperovich, V. L.

PY - 2017/5/1

Y1 - 2017/5/1

N2 - The evolution of probabilities of escape of hot and thermalized electrons from GaAs(001) with adsorbed cesium and oxygen layers to vacuum at the transition from positive to negative effective electron affinity is studied by the photoemission quantum yield spectroscopy. A minimum of the probability of escape of thermalized electrons near zero electron affinity is revealed and explained.

AB - The evolution of probabilities of escape of hot and thermalized electrons from GaAs(001) with adsorbed cesium and oxygen layers to vacuum at the transition from positive to negative effective electron affinity is studied by the photoemission quantum yield spectroscopy. A minimum of the probability of escape of thermalized electrons near zero electron affinity is revealed and explained.

KW - ENHANCED THERMIONIC EMISSION

KW - ENERGY

KW - SURFACE

KW - PHOTOEMISSION

KW - QUANTIZATION

KW - INTERFACE

UR - http://www.scopus.com/inward/record.url?scp=85025170751&partnerID=8YFLogxK

U2 - 10.1134/S0021364017100149

DO - 10.1134/S0021364017100149

M3 - Article

AN - SCOPUS:85025170751

VL - 105

SP - 686

EP - 690

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 10

ER -

Electron emission from Cs/GaAs and GaAs(Cs, О) with positive and negative electron affinity

Abstract

Keywords

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