Electron Effective Mass and g Factor in Wide HgTe Quantum Wells

S. V. Gudina, V. N. Neverov, E. V. Ilchenko, A. S. Bogolubskii, G. I. Harus, N. G. Shelushinina, S. M. Podgornykh, M. V. Yakunin, N. N. Mikhailov, S. A. Dvoretsky

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3 Citations (Scopus)

Abstract

The magnetic-field (0 T < B < 9 T) dependence of the longitudinal and Hall resistances at fixed temperatures (2 K < T < 50 K) for the HgCdTe/HgTe/HgCdTe system with a HgTe quantum well 20.3 nm in width are measured. The activation analysis of the magnetoresistance curves is used as a tool for identifying the mobility gaps between neighboring Landau levels. The activation-energy values obtained from the temperature dependences of the longitudinal resistance in the plateau regions of the quantum Hall effect with the filling factors ν = 1, 2, 3 make it possible to estimate the effective mass and the g factor of electrons in the system under study. Indications concerning the possibility of large values of the g factor (≅ 80) are obtained.

Original languageEnglish
Pages (from-to)12-18
Number of pages7
JournalSemiconductors
Volume52
Issue number1
DOIs
Publication statusPublished - 1 Jan 2018

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