Electron-Beam Crystallization of Thin Films of Amorphous Silicon Suboxide

E. A. Baranov, V. O. Konstantinov, V. G. Shchukin, A. O. Zamchiy, I. E. Merkulova, N. A. Lunev, V. A. Volodin

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1 Citation (Scopus)

Abstract

Polycrystalline silicon (poly-Si) has been obtained for the first time as a result of irradiating a film of amorphous hydrogenated silicon suboxide with the stoichiometric coefficient of 0.5 (a-SiO0.5:H) and thickness of 580 nm by an electron beam. The electron-beam accelerating voltage and current are 2000 V and 100 mA, respectively. Raman spectra of the silicon films after annealing are obtained as dependent on the time of electron-beam irradiation of the initial material. It is shown that the stress in polycrystalline silicon formed as a result of annealing changes from compression to extension, depending on the irradiation time.

Translated title of the contributionЭлектронно-пучковая кристаллизация тонких пленок аморфного субоксида кремния
Original languageEnglish
Pages (from-to)263-265
Number of pages3
JournalTechnical Physics Letters
Volume47
Issue number3
DOIs
Publication statusPublished - Mar 2021

Keywords

  • electron-beam annealing
  • polycrystalline silicon
  • silicon-suboxide thin films

OECD FOS+WOS

  • 1.03 PHYSICAL SCIENCES AND ASTRONOMY

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