Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation

S. V. Sitnikov; E. E. Rodyakina; A. V. Latyshev

doi:10.1134/S106378261906023X

Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation

S. V. Sitnikov, E. E. Rodyakina, A. V. Latyshev

Research output: Contribution to journal › Article › peer-review

Abstract

Abstract: By means of in situ ultrahigh vacuum reflection electron microscopy, the nucleation of vacancy islands on wide terraces of the Si(100) surface is investigated. The temperature dependence of the displacement of a vacancy island nucleation center is determined in the process of heating a sample with a dc electric current. On the basis of a theoretical model, the effective electric charge of addimers is estimated in the direction across dimer rows of the surface. The effective charge has a positive sign and does not exceed 15 units of the elementary charge in the temperature range of 1020–1120°C.

Original language	English
Pages (from-to)	795-799
Number of pages	5
Journal	Semiconductors
Volume	53
Issue number	6
DOIs	https://doi.org/10.1134/S106378261906023X
Publication status	Published - 1 Jun 2019

Keywords

ATOMIC STEPS
SI(001)
DIFFUSION
SI

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10.1134/S106378261906023X

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title = "Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation",

abstract = "Abstract: By means of in situ ultrahigh vacuum reflection electron microscopy, the nucleation of vacancy islands on wide terraces of the Si(100) surface is investigated. The temperature dependence of the displacement of a vacancy island nucleation center is determined in the process of heating a sample with a dc electric current. On the basis of a theoretical model, the effective electric charge of addimers is estimated in the direction across dimer rows of the surface. The effective charge has a positive sign and does not exceed 15 units of the elementary charge in the temperature range of 1020–1120°C.",

keywords = "ATOMIC STEPS, SI(001), DIFFUSION, SI",

author = "Sitnikov, {S. V.} and Rodyakina, {E. E.} and Latyshev, {A. V.}",

year = "2019",

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doi = "10.1134/S106378261906023X",

language = "English",

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T1 - Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation

AU - Sitnikov, S. V.

AU - Rodyakina, E. E.

AU - Latyshev, A. V.

PY - 2019/6/1

Y1 - 2019/6/1

N2 - Abstract: By means of in situ ultrahigh vacuum reflection electron microscopy, the nucleation of vacancy islands on wide terraces of the Si(100) surface is investigated. The temperature dependence of the displacement of a vacancy island nucleation center is determined in the process of heating a sample with a dc electric current. On the basis of a theoretical model, the effective electric charge of addimers is estimated in the direction across dimer rows of the surface. The effective charge has a positive sign and does not exceed 15 units of the elementary charge in the temperature range of 1020–1120°C.

AB - Abstract: By means of in situ ultrahigh vacuum reflection electron microscopy, the nucleation of vacancy islands on wide terraces of the Si(100) surface is investigated. The temperature dependence of the displacement of a vacancy island nucleation center is determined in the process of heating a sample with a dc electric current. On the basis of a theoretical model, the effective electric charge of addimers is estimated in the direction across dimer rows of the surface. The effective charge has a positive sign and does not exceed 15 units of the elementary charge in the temperature range of 1020–1120°C.

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KW - SI(001)

KW - DIFFUSION

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