Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation

Research output: Contribution to journalArticlepeer-review

Abstract

Abstract: By means of in situ ultrahigh vacuum reflection electron microscopy, the nucleation of vacancy islands on wide terraces of the Si(100) surface is investigated. The temperature dependence of the displacement of a vacancy island nucleation center is determined in the process of heating a sample with a dc electric current. On the basis of a theoretical model, the effective electric charge of addimers is estimated in the direction across dimer rows of the surface. The effective charge has a positive sign and does not exceed 15 units of the elementary charge in the temperature range of 1020–1120°C.

Original languageEnglish
Pages (from-to)795-799
Number of pages5
JournalSemiconductors
Volume53
Issue number6
DOIs
Publication statusPublished - 1 Jun 2019

Keywords

  • ATOMIC STEPS
  • SI(001)
  • DIFFUSION
  • SI

Fingerprint Dive into the research topics of 'Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation'. Together they form a unique fingerprint.

Cite this