Elastic Properties of Suspended Conducting GaAs/AlGaAs Nanostructures by Means of Atomic Force Microscopy

E. Yu Zhdanov, A. G. Pogosov, D. A. Pokhabov, M. V. Budantsev, A. S. Kozhukhov, A. K. Bakarov

Research output: Contribution to journalArticlepeer-review

Abstract

This paper demonstrates the applicability of nanoindentation technique using atomic-force microscope cantilever for studying the elastic properties of suspended semiconductor structures on the basis of relatively thick GaAs/AlGaAs membranes in the case when their stiffness significantly exceeds that of the cantilever of atomic-force microscope, which is confirmed by the agreement between the experimentally determined values of both relative and absolute stiffness measured at different points of the investigated structure with theoretical predictions.

Original languageEnglish
Pages (from-to)496-501
Number of pages6
JournalOptoelectronics, Instrumentation and Data Processing
Volume54
Issue number5
DOIs
Publication statusPublished - 1 Sep 2018

Keywords

  • atomic-force microscopy
  • GaAs/AlGaAs
  • nanoelectromechanical systems
  • suspended nanostructures

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