Elastic Properties of Suspended Conducting GaAs/AlGaAs Nanostructures by Means of Atomic Force Microscopy

E. Yu Zhdanov; A. G. Pogosov; D. A. Pokhabov; M. V. Budantsev; A. S. Kozhukhov; A. K. Bakarov

doi:10.3103/S8756699018050114

Elastic Properties of Suspended Conducting GaAs/AlGaAs Nanostructures by Means of Atomic Force Microscopy

E. Yu Zhdanov, A. G. Pogosov, D. A. Pokhabov, M. V. Budantsev, A. S. Kozhukhov, A. K. Bakarov

Research output: Contribution to journal › Article › peer-review

Abstract

This paper demonstrates the applicability of nanoindentation technique using atomic-force microscope cantilever for studying the elastic properties of suspended semiconductor structures on the basis of relatively thick GaAs/AlGaAs membranes in the case when their stiffness significantly exceeds that of the cantilever of atomic-force microscope, which is confirmed by the agreement between the experimentally determined values of both relative and absolute stiffness measured at different points of the investigated structure with theoretical predictions.

Original language	English
Pages (from-to)	496-501
Number of pages	6
Journal	Optoelectronics, Instrumentation and Data Processing
Volume	54
Issue number	5
DOIs	https://doi.org/10.3103/S8756699018050114
Publication status	Published - 1 Sep 2018

Keywords

atomic-force microscopy
GaAs/AlGaAs
nanoelectromechanical systems
suspended nanostructures

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10.3103/S8756699018050114

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title = "Elastic Properties of Suspended Conducting GaAs/AlGaAs Nanostructures by Means of Atomic Force Microscopy",

abstract = "This paper demonstrates the applicability of nanoindentation technique using atomic-force microscope cantilever for studying the elastic properties of suspended semiconductor structures on the basis of relatively thick GaAs/AlGaAs membranes in the case when their stiffness significantly exceeds that of the cantilever of atomic-force microscope, which is confirmed by the agreement between the experimentally determined values of both relative and absolute stiffness measured at different points of the investigated structure with theoretical predictions.",

keywords = "atomic-force microscopy, GaAs/AlGaAs, nanoelectromechanical systems, suspended nanostructures",

author = "Zhdanov, {E. Yu} and Pogosov, {A. G.} and Pokhabov, {D. A.} and Budantsev, {M. V.} and Kozhukhov, {A. S.} and Bakarov, {A. K.}",

year = "2018",

month = sep,

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doi = "10.3103/S8756699018050114",

language = "English",

volume = "54",

pages = "496--501",

journal = "Optoelectronics, Instrumentation and Data Processing",

issn = "8756-6990",

publisher = "Allerton Press Inc.",

number = "5",

}

Elastic Properties of Suspended Conducting GaAs/AlGaAs Nanostructures by Means of Atomic Force Microscopy. / Zhdanov, E. Yu ; Pogosov, A. G.; Pokhabov, D. A.; Budantsev, M. V.; Kozhukhov, A. S.; Bakarov, A. K.

In: Optoelectronics, Instrumentation and Data Processing, Vol. 54, No. 5, 01.09.2018, p. 496-501.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Elastic Properties of Suspended Conducting GaAs/AlGaAs Nanostructures by Means of Atomic Force Microscopy

AU - Zhdanov, E. Yu

AU - Pogosov, A. G.

AU - Pokhabov, D. A.

AU - Budantsev, M. V.

AU - Kozhukhov, A. S.

AU - Bakarov, A. K.

PY - 2018/9/1

Y1 - 2018/9/1

N2 - This paper demonstrates the applicability of nanoindentation technique using atomic-force microscope cantilever for studying the elastic properties of suspended semiconductor structures on the basis of relatively thick GaAs/AlGaAs membranes in the case when their stiffness significantly exceeds that of the cantilever of atomic-force microscope, which is confirmed by the agreement between the experimentally determined values of both relative and absolute stiffness measured at different points of the investigated structure with theoretical predictions.

AB - This paper demonstrates the applicability of nanoindentation technique using atomic-force microscope cantilever for studying the elastic properties of suspended semiconductor structures on the basis of relatively thick GaAs/AlGaAs membranes in the case when their stiffness significantly exceeds that of the cantilever of atomic-force microscope, which is confirmed by the agreement between the experimentally determined values of both relative and absolute stiffness measured at different points of the investigated structure with theoretical predictions.

KW - atomic-force microscopy

KW - GaAs/AlGaAs

KW - nanoelectromechanical systems

KW - suspended nanostructures

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DO - 10.3103/S8756699018050114

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SP - 496

EP - 501

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 5

ER -

Elastic Properties of Suspended Conducting GaAs/AlGaAs Nanostructures by Means of Atomic Force Microscopy

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