Abstract
Monte Carlo algorithms are developed to simulate the electron transport in semiconductors. In particular, the drift velocity in GaN semiconductors is calculated, and a comparison with experimental measurements is discussed. Explicit expressions for the scattering probabilities and distributions of the scattering angle of electrons on polar optical and intervalley phonons, and acoustic deformation potential as well are given. A good agreement of the simulation results and the experimental measurements reveals that the M-L valley is located at 0.7 eV higher than the Γ-valley. This value agrees with other experimental studies, while it is lower compared to ab initio calculations.
| Original language | English |
|---|---|
| Pages (from-to) | 263-271 |
| Number of pages | 9 |
| Journal | Monte Carlo Methods and Applications |
| Volume | 26 |
| Issue number | 4 |
| Early online date | 30 Oct 2020 |
| DOIs | |
| Publication status | Published - 1 Dec 2020 |
Keywords
- Boltzmann equation
- Drift velocity
- GaN semiconductors
- heterostructures
- phonons
- satellite valleys