Drift velocity in GaN semiconductors: Monte Carlo simulation and comparison with experimental measurements

Evgenia Kablukova, Karl Sabelfeld, Dmitrii Y. Protasov, Konstantin S. Zhuravlev

Research output: Contribution to journalArticlepeer-review

Abstract

Monte Carlo algorithms are developed to simulate the electron transport in semiconductors. In particular, the drift velocity in GaN semiconductors is calculated, and a comparison with experimental measurements is discussed. Explicit expressions for the scattering probabilities and distributions of the scattering angle of electrons on polar optical and intervalley phonons, and acoustic deformation potential as well are given. A good agreement of the simulation results and the experimental measurements reveals that the M-L valley is located at 0.7 eV higher than the Γ-valley. This value agrees with other experimental studies, while it is lower compared to ab initio calculations.

Original languageEnglish
Pages (from-to)263-271
Number of pages9
JournalMonte Carlo Methods and Applications
Volume26
Issue number4
Early online date30 Oct 2020
DOIs
Publication statusPublished - 1 Dec 2020

Keywords

  • Boltzmann equation
  • Drift velocity
  • GaN semiconductors
  • heterostructures
  • phonons
  • satellite valleys

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