Donor-acceptor nature of orange photoluminescence in AlN

Ivan A. Aleksandrov, Timur V. Malin, Denis S. Milakhin, Boris Ya Ber, Dmitrii Yu Kazantsev, Konstantin S. Zhuravlev

Research output: Contribution to journalArticlepeer-review


Recombination dynamics, photoluminescence and photoluminescence excitation spectra have been investigated for 1.9 eV photoluminescence band in AlN in the temperature range of 5-650 K. The recombination dynamics for the 1.9 eV photoluminescence band has been described by a model of donor-acceptor recombination with taking into account a broadening due to electron coupling with local lattice vibrations of a deep level defect. The experimental results have been compared with density functional theory calculations of luminescence peak energies and line shapes of band to defect and donor-acceptor transitions, and possible origin of the orange photoluminescence band in AlN has been discussed.

Original languageEnglish
Article number125006
Number of pages9
JournalSemiconductor Science and Technology
Issue number12
Publication statusPublished - Oct 2020


  • AlN
  • defects
  • photoluminescence


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