The modification of (111) face of synthetic diamond has been studied experimentally for high-fluence 30 keV argon bombardment. It has been found that ion irradiation leads to the electrically conductive layer formation the sheet resistance of which decreases more than 100 times while changing the temperature of the irradiated diamond from 70 to 400 oC. This effect, as well as significant changes of optical transmittance after ion irradiation are associated with ion-induced structural changes of irradiated diamond obtained by the methods of Raman spectroscopy.
|Journal||Journal of Physics: Conference Series|
|Publication status||Published - 21 Sep 2016|
|Event||2nd Conference on Plasma and Laser Research and Technologies - Moscow, Russian Federation|
Duration: 25 Jan 2016 → 27 Jan 2016