Abstract
We present a new transparent passivated contact concept utilizing microcrystalline silicon carbide and an ultra-thin silicon tunnel oxide ( \mu \mathrm{c} -SiC:H(n)/SiO) for the front side of silicon heterojunction solar cells. We investigated different oxidation agents in combination with selected deposition conditions of the \mu \mathrm{c} -SiC:H(n) to find the ideal parameters for high passivation quality and high conductivity. Implied open-circuit voltages up to 728 mV were achieved without any post-deposition treatment e.g. high temperature or forming gas annealing. The transparent passivated contact solar cells show increased quantum efficiency in the short wavelength range as compared to the conventional silicon heterojunction solar cells. These insights show the great potential for the transparent passivated contact front side.
Original language | English |
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Title of host publication | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 3468-3472 |
Number of pages | 5 |
ISBN (Electronic) | 9781538685297 |
DOIs | |
Publication status | Published - 26 Nov 2018 |
Event | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: 10 Jun 2018 → 15 Jun 2018 |
Conference
Conference | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 |
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Country | United States |
City | Waikoloa Village |
Period | 10.06.2018 → 15.06.2018 |
Keywords
- passivated contact
- photovoltaic cells
- selected contact
- silicon
- silicon carbide
- transparent passivated contact
- tunneling