Development of a Transparent Passivated Contact as a Front Side Contact for Silicon Heterojunction Solar Cells

Malte Kohler; Alexandr Zamchiy; Manuel Pomaska; Andreas Lambertz; Florian Lentz; Weiyuan Duan; Vladimir Smirnov; Friedhelm Finger; Uwe Rau; Kaining Ding

doi:10.1109/PVSC.2018.8548008

Development of a Transparent Passivated Contact as a Front Side Contact for Silicon Heterojunction Solar Cells

Malte Kohler, Alexandr Zamchiy, Manuel Pomaska, Andreas Lambertz, Florian Lentz, Weiyuan Duan, Vladimir Smirnov, Friedhelm Finger, Uwe Rau, Kaining Ding

General Physics Section

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

4 Citations (Scopus)

Abstract

We present a new transparent passivated contact concept utilizing microcrystalline silicon carbide and an ultra-thin silicon tunnel oxide ( \mu \mathrm{c} -SiC:H(n)/SiO) for the front side of silicon heterojunction solar cells. We investigated different oxidation agents in combination with selected deposition conditions of the \mu \mathrm{c} -SiC:H(n) to find the ideal parameters for high passivation quality and high conductivity. Implied open-circuit voltages up to 728 mV were achieved without any post-deposition treatment e.g. high temperature or forming gas annealing. The transparent passivated contact solar cells show increased quantum efficiency in the short wavelength range as compared to the conventional silicon heterojunction solar cells. These insights show the great potential for the transparent passivated contact front side.

Original language	English
Title of host publication	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3468-3472
Number of pages	5
ISBN (Electronic)	9781538685297
DOIs	https://doi.org/10.1109/PVSC.2018.8548008
Publication status	Published - 26 Nov 2018
Event	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: 10 Jun 2018 → 15 Jun 2018

Conference

Conference	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country	United States
City	Waikoloa Village
Period	10.06.2018 → 15.06.2018

Keywords

passivated contact
photovoltaic cells
selected contact
silicon
silicon carbide
transparent passivated contact
tunneling

Access to Document

10.1109/PVSC.2018.8548008

Cite this

Kohler, M., Zamchiy, A., Pomaska, M., Lambertz, A., Lentz, F., Duan, W., Smirnov, V., Finger, F., Rau, U., & Ding, K. (2018). Development of a Transparent Passivated Contact as a Front Side Contact for Silicon Heterojunction Solar Cells. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 3468-3472). [8548008] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2018.8548008

Kohler, Malte ; Zamchiy, Alexandr ; Pomaska, Manuel ; Lambertz, Andreas ; Lentz, Florian ; Duan, Weiyuan ; Smirnov, Vladimir ; Finger, Friedhelm ; Rau, Uwe ; Ding, Kaining. / Development of a Transparent Passivated Contact as a Front Side Contact for Silicon Heterojunction Solar Cells. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 3468-3472

@inproceedings{b6e70544079d4b36bc25a5593caa7a98,

title = "Development of a Transparent Passivated Contact as a Front Side Contact for Silicon Heterojunction Solar Cells",

abstract = "We present a new transparent passivated contact concept utilizing microcrystalline silicon carbide and an ultra-thin silicon tunnel oxide ( \mu \mathrm{c} -SiC:H(n)/SiO) for the front side of silicon heterojunction solar cells. We investigated different oxidation agents in combination with selected deposition conditions of the \mu \mathrm{c} -SiC:H(n) to find the ideal parameters for high passivation quality and high conductivity. Implied open-circuit voltages up to 728 mV were achieved without any post-deposition treatment e.g. high temperature or forming gas annealing. The transparent passivated contact solar cells show increased quantum efficiency in the short wavelength range as compared to the conventional silicon heterojunction solar cells. These insights show the great potential for the transparent passivated contact front side.",

keywords = "passivated contact, photovoltaic cells, selected contact, silicon, silicon carbide, transparent passivated contact, tunneling",

author = "Malte Kohler and Alexandr Zamchiy and Manuel Pomaska and Andreas Lambertz and Florian Lentz and Weiyuan Duan and Vladimir Smirnov and Friedhelm Finger and Uwe Rau and Kaining Ding",

year = "2018",

month = nov,

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doi = "10.1109/PVSC.2018.8548008",

language = "English",

pages = "3468--3472",

booktitle = "2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC",

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address = "United States",

note = "7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",

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Kohler, M, Zamchiy, A, Pomaska, M, Lambertz, A, Lentz, F, Duan, W, Smirnov, V, Finger, F, Rau, U & Ding, K 2018, Development of a Transparent Passivated Contact as a Front Side Contact for Silicon Heterojunction Solar Cells. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8548008, Institute of Electrical and Electronics Engineers Inc., pp. 3468-3472, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 10.06.2018. https://doi.org/10.1109/PVSC.2018.8548008

Development of a Transparent Passivated Contact as a Front Side Contact for Silicon Heterojunction Solar Cells. / Kohler, Malte; Zamchiy, Alexandr; Pomaska, Manuel; Lambertz, Andreas; Lentz, Florian; Duan, Weiyuan; Smirnov, Vladimir; Finger, Friedhelm; Rau, Uwe; Ding, Kaining.

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. p. 3468-3472 8548008.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

TY - GEN

T1 - Development of a Transparent Passivated Contact as a Front Side Contact for Silicon Heterojunction Solar Cells

AU - Kohler, Malte

AU - Zamchiy, Alexandr

AU - Pomaska, Manuel

AU - Lambertz, Andreas

AU - Lentz, Florian

AU - Duan, Weiyuan

AU - Smirnov, Vladimir

AU - Finger, Friedhelm

AU - Rau, Uwe

AU - Ding, Kaining

PY - 2018/11/26

Y1 - 2018/11/26

N2 - We present a new transparent passivated contact concept utilizing microcrystalline silicon carbide and an ultra-thin silicon tunnel oxide ( \mu \mathrm{c} -SiC:H(n)/SiO) for the front side of silicon heterojunction solar cells. We investigated different oxidation agents in combination with selected deposition conditions of the \mu \mathrm{c} -SiC:H(n) to find the ideal parameters for high passivation quality and high conductivity. Implied open-circuit voltages up to 728 mV were achieved without any post-deposition treatment e.g. high temperature or forming gas annealing. The transparent passivated contact solar cells show increased quantum efficiency in the short wavelength range as compared to the conventional silicon heterojunction solar cells. These insights show the great potential for the transparent passivated contact front side.

AB - We present a new transparent passivated contact concept utilizing microcrystalline silicon carbide and an ultra-thin silicon tunnel oxide ( \mu \mathrm{c} -SiC:H(n)/SiO) for the front side of silicon heterojunction solar cells. We investigated different oxidation agents in combination with selected deposition conditions of the \mu \mathrm{c} -SiC:H(n) to find the ideal parameters for high passivation quality and high conductivity. Implied open-circuit voltages up to 728 mV were achieved without any post-deposition treatment e.g. high temperature or forming gas annealing. The transparent passivated contact solar cells show increased quantum efficiency in the short wavelength range as compared to the conventional silicon heterojunction solar cells. These insights show the great potential for the transparent passivated contact front side.

KW - passivated contact

KW - photovoltaic cells

KW - selected contact

KW - silicon

KW - silicon carbide

KW - transparent passivated contact

KW - tunneling

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DO - 10.1109/PVSC.2018.8548008

M3 - Conference contribution

AN - SCOPUS:85059913293

SP - 3468

EP - 3472

BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018

Y2 - 10 June 2018 through 15 June 2018

ER -

Kohler M, Zamchiy A, Pomaska M, Lambertz A, Lentz F, Duan W et al. Development of a Transparent Passivated Contact as a Front Side Contact for Silicon Heterojunction Solar Cells. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc. 2018. p. 3468-3472. 8548008 https://doi.org/10.1109/PVSC.2018.8548008

Development of a Transparent Passivated Contact as a Front Side Contact for Silicon Heterojunction Solar Cells

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