Determination of trap density in hafnium oxide films produced by different atomic layer deposition techniques

D. R. Islamov, V. A. Gritsenko, M. S. Lebedev

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Abstract

The trap density in hafnia (H1O2) films produced by the atomic layer deposition technique with different precursor sets followed by annealing at various temperatures was determined from transport measurements. In was shown that hydrogen from the fyO-precursor plays an important role in the formation and further passivation of oxygen vacancies in H1O2 films. The equilibrium value of the trap density in hafnia films was found out.

Original languageEnglish
Title of host publicationSEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR
EditorsD Misra, S DeGendt, M Houssa, K Kita, D Landheer
PublisherElectrochemical Society, Inc.
Pages265-270
Number of pages6
Volume80
Edition1
ISBN (Electronic)9781607685395
ISBN (Print)978-1-62332-470-4
DOIs
Publication statusPublished - 1 Jan 2017
Event15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting - National Harbor, United States
Duration: 1 Oct 20175 Oct 2017

Publication series

NameECS Transactions
PublisherELECTROCHEMICAL SOC INC
Volume80
ISSN (Print)1938-5862

Conference

Conference15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting
CountryUnited States
CityNational Harbor
Period01.10.201705.10.2017

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