Determination of trap density in hafnia films produced by two atomic layer deposition techniques

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Abstract

In this study, we report on the experimental determination of trap density in hafnia (HfO2) films produced by the atomic layer deposition technique with different precursor sets followed by annealing at various temperatures. We show that hydrogen from the H2O-precursor plays an important role in the formation and further passivation of oxygen vacancies in HfO2 films.

Original languageEnglish
Pages (from-to)104-107
Number of pages4
JournalMicroelectronic Engineering
Volume178
DOIs
Publication statusPublished - 25 Jun 2017

Keywords

  • Atomic layer deposition
  • Defects
  • Hafnium oxide
  • Oxygen vacancy
  • DIELECTRICS

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