The photoluminescence properties of the intensive defect-related emission in heavily doped AlxGal-xN:Si layers with x > 0.5 have been investigated by photoluminescence (PL) spectroscopy. The PL band in AlN was attributed to donor-acceptor (DA) transitions. At the lowest Al content, the impurity band merges with the conduction band and DA transitions are replaced by electron-acceptor transitions involving the same acceptor. The energy structure of recombination centers was obtained using the model of configuration coordinates for Al0.67Ga0.33N.
|Number of pages||6|
|Journal||Journal of Physics: Conference Series|
|Publication status||Published - 10 Apr 2018|
|Event||19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017 - St. Petersburg, Russian Federation|
Duration: 27 Nov 2017 → 1 Dec 2017