Determination of the energy structure of recombination centers in heavily doped AlxGa1-xN: Si epitaxial layers with x > 0.5

I. V. Osinnykh, T. V. Malin, K. S. Zhuravlev

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

The photoluminescence properties of the intensive defect-related emission in heavily doped AlxGal-xN:Si layers with x > 0.5 have been investigated by photoluminescence (PL) spectroscopy. The PL band in AlN was attributed to donor-acceptor (DA) transitions. At the lowest Al content, the impurity band merges with the conduction band and DA transitions are replaced by electron-acceptor transitions involving the same acceptor. The energy structure of recombination centers was obtained using the model of configuration coordinates for Al0.67Ga0.33N.

Original languageEnglish
Article number012006
Number of pages6
JournalJournal of Physics: Conference Series
Volume993
Issue number1
DOIs
Publication statusPublished - 10 Apr 2018
Event19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017 - St. Petersburg, Russian Federation
Duration: 27 Nov 20171 Dec 2017

Keywords

  • SI
  • DONORS
  • ALGAN
  • GAP

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