Abstract

This paper describes systematic measurements of the main parameters of the DIMEX-Si silicon microstrip detector prototype, designed to study fast processes in a beam of synchrotron radiation (SR). The dynamic range, spatial resolution and temporal parameters of the detector are estimated. The parameters of the prototype silicon detector are compared with the DIMEX-G gas version. The maximum flux which can be measured by the silicon detector is 40 times higher than that of the gas detector. The spatial resolution of the silicon detector is 130 microns and that of the gas detector is 250 microns. The estimated time resolution of the silicon detector is 15 ns, while for a gas detector this value is about 50 ns. All the characteristics of DIMEX-Si are measured with a cycle time of 25 ns. The results of the first tests of a full-scale silicon detector for diffraction studies, operating in the integrating mode at a speed of up to 2 Mframes/s, are also given. The sensor contains 1024 strips 30 mm long with a step of 50 microns; 512 of these strips are connected to readout electronics based on APC128 ASIC. Each chip contains 128 channels, which consist of a low-noise integrator with 32 analog memory cells. The possibility of signal visualization from single photons and electrons from 109Cd and 90Sr sources is shown.

Original languageEnglish
Pages (from-to)371-377
Number of pages7
JournalJournal of Surface Investigation
Volume15
Issue number2
DOIs
Publication statusPublished - Mar 2021

Keywords

  • high-speed processes
  • SR detectors
  • synchrotron radiation

OECD FOS+WOS

  • 2.05 MATERIALS ENGINEERING

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