Crystallization of optically thick amorphous silicon films by near-ir femtosecond laser processing

Eugeny Mitsai, Alexander Dostovalov, Kirill Bronnikov, Alexander Nepomniaschiy, Alexey Zhizhchenko, Aleksandr Kuchmizhak

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

Abstract

We demonstrated efficient crystallization of amorphous Si films induced by their direct irradiation with near-IR femtosecond laser pulses coming at sub-MHz repetition rate. Comprehensive analysis of morphology and composition of the laser-annealed film by atomic-force microscopy, Fourier-transform IR, Raman and energy dispersive X-ray spectroscopy as well as numerical modeling of optical spectra confirmed efficient crystallization of amorphous Si and high-quality of the obtained films opening pathway for applications in thin-film solar cells, transistors and displays.

Original languageEnglish
Title of host publicationPhysics and Technology of Nanostructured Materials V - Selected full text papers from the 5th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-Nanomat 2020
EditorsNikolay Gennadievich Galkin
PublisherTrans Tech Publications Ltd
Pages134-139
Number of pages6
ISBN (Print)9783035737936
DOIs
Publication statusPublished - 2020
Event5th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-Nanomat 2020 - Vladivostok, Russian Federation
Duration: 30 Jul 20203 Aug 2020

Publication series

NameSolid State Phenomena
Volume312 SSP
ISSN (Print)1012-0394
ISSN (Electronic)1662-9779

Conference

Conference5th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-Nanomat 2020
CountryRussian Federation
CityVladivostok
Period30.07.202003.08.2020

Keywords

  • Amorphous silicon
  • Femtosecond laser pulses
  • FTIR spectroscopy
  • Laser-induced annealing
  • Polycrystalline silicon
  • Raman spectroscopy
  • Thin films

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