TY - GEN
T1 - Crystallization of optically thick amorphous silicon films by near-ir femtosecond laser processing
AU - Mitsai, Eugeny
AU - Dostovalov, Alexander
AU - Bronnikov, Kirill
AU - Nepomniaschiy, Alexander
AU - Zhizhchenko, Alexey
AU - Kuchmizhak, Aleksandr
N1 - Funding Information:
This work was supported by the Russian Science Foundation (Grant no. 18-79-10091) and Russian Foundation for Basic Research (project no. 19-32-90235).
Publisher Copyright:
© 2020 Trans Tech Publications Ltd, Switzerland.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020
Y1 - 2020
N2 - We demonstrated efficient crystallization of amorphous Si films induced by their direct irradiation with near-IR femtosecond laser pulses coming at sub-MHz repetition rate. Comprehensive analysis of morphology and composition of the laser-annealed film by atomic-force microscopy, Fourier-transform IR, Raman and energy dispersive X-ray spectroscopy as well as numerical modeling of optical spectra confirmed efficient crystallization of amorphous Si and high-quality of the obtained films opening pathway for applications in thin-film solar cells, transistors and displays.
AB - We demonstrated efficient crystallization of amorphous Si films induced by their direct irradiation with near-IR femtosecond laser pulses coming at sub-MHz repetition rate. Comprehensive analysis of morphology and composition of the laser-annealed film by atomic-force microscopy, Fourier-transform IR, Raman and energy dispersive X-ray spectroscopy as well as numerical modeling of optical spectra confirmed efficient crystallization of amorphous Si and high-quality of the obtained films opening pathway for applications in thin-film solar cells, transistors and displays.
KW - Amorphous silicon
KW - Femtosecond laser pulses
KW - FTIR spectroscopy
KW - Laser-induced annealing
KW - Polycrystalline silicon
KW - Raman spectroscopy
KW - Thin films
UR - http://www.scopus.com/inward/record.url?scp=85097597537&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/SSP.312.134
DO - 10.4028/www.scientific.net/SSP.312.134
M3 - Conference contribution
AN - SCOPUS:85097597537
SN - 9783035737936
T3 - Solid State Phenomena
SP - 134
EP - 139
BT - Physics and Technology of Nanostructured Materials V - Selected full text papers from the 5th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-Nanomat 2020
A2 - Galkin, Nikolay Gennadievich
PB - Trans Tech Publications Ltd
T2 - 5th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-Nanomat 2020
Y2 - 30 July 2020 through 3 August 2020
ER -