Corrigendum to “Fabrication of polycrystalline silicon thin films by gold-induced crystallization of amorphous silicon suboxide” [Vacuum 192 (2021) 110462](S0042207X21004127)(10.1016/j.vacuum.2021.110462)

A. O. Zamchiy; E. A. Baranov; S. V. Starinskiy; N. A. Lunev; I. E. Merkulova

doi:10.1016/j.vacuum.2022.111713

Corrigendum to “Fabrication of polycrystalline silicon thin films by gold-induced crystallization of amorphous silicon suboxide” [Vacuum 192 (2021) 110462](S0042207X21004127)(10.1016/j.vacuum.2021.110462)

A. O. Zamchiy, E. A. Baranov, S. V. Starinskiy, N. A. Lunev, I. E. Merkulova

Research output: Contribution to journal › Comment/debate › peer-review

Abstract

The authors regret < that there is an inaccuracy when specifying the stoichiometry coefficient x of a-SiO_x films. The value of 0.4 is indicated in the work which was obtained from the infrared (IR) transmission spectra. More precise measurements performed using X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectroscopy (EDS) showed that the stoichiometry coefficient x of the initial a-SiO_x films is 0.9. In addition, this made it possible to refine the proportionality coefficient used to determine the concentration of bonded oxygen in a-SiO_x by Fourier-transform IR spectroscopy. The corrections are as follows: In the text of the article, the chemical formula a-SiO_0.4 should appear as a-SiO_0.9 >. The authors would like to apologise for any inconvenience caused.

Original language	English
Article number	111713
Journal	Vacuum
Volume	208
DOIs	https://doi.org/10.1016/j.vacuum.2022.111713
Publication status	Published - Feb 2023

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@article{a0ba010c2d494456b2d7dfae270352da,

title = "Corrigendum to “Fabrication of polycrystalline silicon thin films by gold-induced crystallization of amorphous silicon suboxide” [Vacuum 192 (2021) 110462](S0042207X21004127)(10.1016/j.vacuum.2021.110462)",

abstract = "The authors regret < that there is an inaccuracy when specifying the stoichiometry coefficient x of a-SiOx films. The value of 0.4 is indicated in the work which was obtained from the infrared (IR) transmission spectra. More precise measurements performed using X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectroscopy (EDS) showed that the stoichiometry coefficient x of the initial a-SiOx films is 0.9. In addition, this made it possible to refine the proportionality coefficient used to determine the concentration of bonded oxygen in a-SiOx by Fourier-transform IR spectroscopy. The corrections are as follows: In the text of the article, the chemical formula a-SiO0.4 should appear as a-SiO0.9 >. The authors would like to apologise for any inconvenience caused.",

author = "Zamchiy, {A. O.} and Baranov, {E. A.} and Starinskiy, {S. V.} and Lunev, {N. A.} and Merkulova, {I. E.}",

note = "Publisher Copyright: {\textcopyright} 2022 Elsevier Ltd",

year = "2023",

month = feb,

doi = "10.1016/j.vacuum.2022.111713",

language = "English",

volume = "208",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Ltd",

}

Corrigendum to “Fabrication of polycrystalline silicon thin films by gold-induced crystallization of amorphous silicon suboxide” [Vacuum 192 (2021) 110462](S0042207X21004127)(10.1016/j.vacuum.2021.110462). / Zamchiy, A. O.; Baranov, E. A.; Starinskiy, S. V. et al.

In: Vacuum, Vol. 208, 111713, 02.2023.

Research output: Contribution to journal › Comment/debate › peer-review

TY - JOUR

T1 - Corrigendum to “Fabrication of polycrystalline silicon thin films by gold-induced crystallization of amorphous silicon suboxide” [Vacuum 192 (2021) 110462](S0042207X21004127)(10.1016/j.vacuum.2021.110462)

AU - Zamchiy, A. O.

AU - Baranov, E. A.

AU - Starinskiy, S. V.

AU - Lunev, N. A.

AU - Merkulova, I. E.

PY - 2023/2

Y1 - 2023/2

N2 - The authors regret < that there is an inaccuracy when specifying the stoichiometry coefficient x of a-SiOx films. The value of 0.4 is indicated in the work which was obtained from the infrared (IR) transmission spectra. More precise measurements performed using X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectroscopy (EDS) showed that the stoichiometry coefficient x of the initial a-SiOx films is 0.9. In addition, this made it possible to refine the proportionality coefficient used to determine the concentration of bonded oxygen in a-SiOx by Fourier-transform IR spectroscopy. The corrections are as follows: In the text of the article, the chemical formula a-SiO0.4 should appear as a-SiO0.9 >. The authors would like to apologise for any inconvenience caused.

AB - The authors regret < that there is an inaccuracy when specifying the stoichiometry coefficient x of a-SiOx films. The value of 0.4 is indicated in the work which was obtained from the infrared (IR) transmission spectra. More precise measurements performed using X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectroscopy (EDS) showed that the stoichiometry coefficient x of the initial a-SiOx films is 0.9. In addition, this made it possible to refine the proportionality coefficient used to determine the concentration of bonded oxygen in a-SiOx by Fourier-transform IR spectroscopy. The corrections are as follows: In the text of the article, the chemical formula a-SiO0.4 should appear as a-SiO0.9 >. The authors would like to apologise for any inconvenience caused.

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U2 - 10.1016/j.vacuum.2022.111713

DO - 10.1016/j.vacuum.2022.111713

M3 - Comment/debate

AN - SCOPUS:85143759421

VL - 208

JO - Vacuum

JF - Vacuum

SN - 0042-207X

M1 - 111713

ER -

Corrigendum to “Fabrication of polycrystalline silicon thin films by gold-induced crystallization of amorphous silicon suboxide” [Vacuum 192 (2021) 110462](S0042207X21004127)(10.1016/j.vacuum.2021.110462)

Abstract

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